Single N Channel Trench MOSFET MagnaChip Semicon MDE1991RH Designed for General Purpose Industrial
Key Attributes
Model Number:
MDE1991RH
Product Custom Attributes
Mfr. Part #:
MDE1991RH
Package:
TO-263
Product Description
Product Overview
The MDE1991RH is a Single N-Channel Trench MOSFET from Magnachip Semiconductor Ltd., utilizing advanced MV MOSFET Technology. It offers high performance with excellent on-state resistance, fast switching capabilities, and superior quality. This device is suitable for industrial applications including Low Power Drives of E-bikes (E-Vehicles), DC/DC converters, and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Name: MDE1991RH
- Technology: MV MOSFET Technology
- Certifications: RoHS Status: Halogen Free
- Origin: Not specified in text
- Material: Not specified in text
- Color: Not specified in text
Technical Specifications
| Characteristic | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | ±20 | ±20 | V | ||
| Continuous Drain Current | ID | TC=25°C (Silicon Limited) | 159 | A | ||
| TC=25°C (Package Limited) | 120 | A | ||||
| TC=100°C | 100 | A | ||||
| Pulsed Drain Current | IDM | (3) | 480 | A | ||
| Power Dissipation | PD | TC=25°C | 223 | W | ||
| TC=100°C | 89 | W | ||||
| Single Pulse Avalanche Energy | EAS | (2) | 392 | mJ | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | ~ | 150 | °C | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RθJA | (1) | 62.5 | °C/W | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.56 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250μA, VGS = 0V | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250μA | 2.0 | 2.9 | 4.0 | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | 1.0 | μA | |
| Gate Leakage Current | IGSS | VGS = ±20V, VDS = 0V | - | ±0.1 | μA | |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 50A | 3.7 | 4.4 | mΩ | |
| Forward Transconductance | gfs | VDS = 10V, ID = 50A | 140 | - | S | |
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 50V, ID = 50A, VGS = 10V | 115 | - | nC | |
| Gate-Source Charge | Qgs | 28 | - | |||
| Gate-Drain Charge | Qg | 26 | - | |||
| Input Capacitance | Ciss | VDS = 40V, VGS = 0V, f = 1.0MHz | 7300 | - | pF | |
| Output Capacitance | Coss | 1360 | - | |||
| Reverse Transfer Capacitance | CRss | 50 | - | |||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 50A , RG = 3.0Ω | 30 | - | ns | |
| Rise Time | tr | 20 | - | |||
| Turn-Off Delay Time | td(off) | 99 | - | |||
| Fall Time | tf | 37 | - | |||
| Gate Resistance | Rg | f=1 MHz | 2.5 | - | Ω | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 50A, VGS = 0V | 0.9 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 50A, dl/dt = 100A/μs | 73 | - | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 150 | - | nC | ||
2512171458_MagnaChip-Semicon-MDE1991RH_C46547714.pdf
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