700V MOSFET MagnaChip Semicon MMUB65R090RURH designed for power loss reduction and energy management
Key Attributes
Model Number:
MMUB65R090RURH
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
35A
RDS(on):
79mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.6pF
Input Capacitance(Ciss):
2.857nF
Output Capacitance(Coss):
71pF
Gate Charge(Qg):
78.9nC@10V
Mfr. Part #:
MMUB65R090RURH
Package:
PDFN88
Product Description
Product Overview
The MMUB65R090R is a high-efficiency N-channel MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology. It offers very low on-resistance and gate charge, enabling significant power loss reduction through high-speed switching. Optimized charge coupling technology enhances efficiency, while user-friendly design provides advantages like low EMI, low switching loss, and excellent ESD capability. This MOSFET is ideal for demanding applications requiring superior performance and reliability.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Certifications: RoHS Compliant
- Package: PDFN88
- Material: Pb free plating, halogen free (Green package)
- Solder Wire: Pure Pb free solder wire (for PRH variants)
Technical Specifications
| Order Code | Marking | VDS @ Tj,max | RDS(on),max | VTH,typ | ID | Qg,typ | Temp. Range | Package | Packing | RoHS Status |
| MMUB65R090RURH | 65R090R | 700 V | 0.090 | 3.0 V | 35 A | 78.9 nC | -55 ~ 150 oC | PDFN88 | Reel | Compliant |
| MMUB65R090RPRH | 65R090R | 700 V | 0.090 | 3.0 V | 35 A | 78.9 nC | -55 ~ 150 oC | PDFN88 | Reel | Compliant |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit | Note |
| Drain Source voltage | VDSS | 650 | V | |
| Gate Source voltage | VGSS | 30 | V | |
| Continuous drain current | ID | 35 (TC=25), 22 (TC=100) | A | ID limited by maximum junction temperature |
| Pulsed drain current | IDM | 105 | A | Pulse width tP limited by Tj,max |
| Power dissipation | PD | 278 | W | |
| Single-pulse avalanche energy | EAS | 900 | mJ | IAS = 9 A |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | |
| Diode dv/dt ruggedness | dv/dt | 50 | V/ns | ISD ID, VDS peak 400V, Tj=25oC |
| Storage temperature | Tstg | -55 ~150 | oC | |
| Maximum operating junction temperature | Tj | 150 | oC |
Thermal Characteristics
| Parameter | Symbol | Value | Unit | |
| Thermal resistance, junction-case max | RthJC | 0.45 | oC/W | |
| Thermal resistance, junction-ambient max | RthJA | 62.5 | oC/W |
Static Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Drain Source breakdown voltage | V(BR)DSS | 650 | - | - | V | VGS = 0V, ID = 1mA |
| Gate threshold voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | VDS = VGS, ID = 250A |
| Zero gate voltage drain current | IDSS | - | - | 1.0 | A | VDS = 650V, VGS = 0V |
| Gate leakage current | IGSS | - | - | 100 | nA | VGS = 30V, VDS =0V |
| Drain-Source on state resistance | RDS(ON) | - | 0.079 | 0.090 | VGS =10V, ID = 17.5A |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Input capacitance | Ciss | - | 2857 | - | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Output capacitance | Coss | - | 71 | - | pF | |
| Reverse transfer capacitance | Crss | - | 9.6 | - | pF | |
| Effective output capacitance energy related | Co(er) | - | 122 | - | VDS = 0V to 520V, VGS = 0V, f = 400kHz | |
| Turn on delay time | td(on) | - | 44 | - | ns | VGS = 10V, RG = 25, VDS = 325V, ID = 35A |
| Rise time | tr | - | 84 | - | ns | |
| Turn off delay time | td(off) | - | 252 | - | ns | |
| Fall time | tf | - | 61 | - | ns | |
| Total gate charge | Qg | - | 78.9 | - | nC | VGS=10V, VDD=520V, ID=35A |
| Gate Source charge | Qgs | - | 12.7 | - | nC | |
| Gate Drain charge | Qgd | - | 34.2 | - | nC | |
| Gate resistance | RG | - | 5.4 | - | VGS = 0V, f = 1.0MHz |
Reverse Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Continuous diode forward current | ISD | - | - | 35 | A | |
| Diode forward voltage | VSD | - | - | 1.4 | V | ISD = 35A, VGS = 0V |
| Reverse recovery time | trr | - | 573 | - | ns | ISD = 35A di/dt = 100A/s VDD = 100V |
| Reverse recovery charge | Qrr | - | 12 | - | C | |
| Reverse recovery current | Irrm | - | 41.9 | - | A |
Applications
- Premium OLED TV
- PFC power supply stages
- Switching applications
- Adapter
2509121533_MagnaChip-Semicon-MMUB65R090RURH_C51891811.pdf
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