P channel power MOSFET LRC LP1480WT1G designed for portable equipment battery powered systems and DSCs
Key Attributes
Model Number:
LP1480WT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
210mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
1 P-Channel
Input Capacitance(Ciss):
480pF
Output Capacitance(Coss):
58pF
Pd - Power Dissipation:
290mW
Gate Charge(Qg):
6.5nC@4.5V
Mfr. Part #:
LP1480WT1G
Package:
SC-70(SOT-323)
Product Description
Product Overview
The LP1480WT1G and S-LP1480WT1G are P-Channel Power MOSFETs designed for power management applications. They offer low on-resistance (RDS(ON)) at various gate-source voltages and drain currents, making them suitable for notebook power management, portable equipment, battery-powered systems, load switches, and DSCs. The S-prefix variant is qualified for automotive applications, meeting AEC-Q101 standards and PPAP capability. These devices comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix variant)
- PPAP Capable: Yes (S-prefix variant)
- Package Type: SC70(SOT-323)
- Channel Type: P-Channel
- Product Line: Power MOSFET
Technical Specifications
| Model | Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| LP1480WT1G, S-LP1480WT1G | Drain-Source voltage | VDS | -20 | Vdc | ||
| Gate-Source Voltage | VGS | 8 | Vdc | |||
| Continuous Drain Current | ID | -1.4 | -1.5 | A | ||
| Pulse Drain Current @Tp=10s | IDM | -3.0 | A | |||
| Power Dissipation FR4 Board @ TA = 25C | PD | 0.430 | W | |||
| Thermal Resistance, JunctiontoAmbient (FR4 @ Minimum Pad) | RJA | 430 | C/W | |||
| Electrical Characteristics (Ta= 25C) | Drain-Source Voltage | V(BR)DSS | -20 | V | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | |||
| Gate Threshold Voltage | VGS(th) | -1.0 | V | |||
| Static Drain-Source On resistance @VGS =-4.5V,ID=-1.0A | RDS(ON) | 210 | m | |||
| Static Drain-Source On resistance @VGS =-2.5V,ID=-0.5A | RDS(ON) | 310 | m | |||
| Static Drain-Source On resistance @VGS =-1.8V,ID=-0.3A | RDS(ON) | 190 | m | |||
| Dynamic Transconductance | gFS | 4.6 | S | |||
| Input Capacitance | Ciss | 480 | pF | |||
| Output Capacitance | Coss | 370 | pF | |||
| Reverse Transfer Capacitance | Crss | 12 | pF | |||
| Gate Resistance | Rg | 12 | ||||
| Total Gate Charge | Qg | 6.5 | nC | |||
| Gate Source Charge | Qgs | 0.3 | nC | |||
| Gate Drain Charge | Qgd | 0.7 | nC | |||
| Source Drain Diode Forward Voltage | VSD | -0.79 | -1.5 | V | ||
| Maximum Body-diode Continuous Current | Is | -1 | A | |||
| Body-diode Reverse Recovery Time | trr | 30 | ns | |||
| Body-diode Reverse Recovery Charge | Qrr | 12 | nC | |||
| Device Marking | W14 | |||||
| Shipping | 3000/Tape&Reel | |||||
| Dimensions (SC70-3/SOT-323) | D | 1.80 | 2.10 | 2.20 | mm | |
| E | 1.15 | 1.24 | 1.35 | mm | ||
| A | 0.80 | 0.90 | 1.00 | mm | ||
| b | 0.30 | 0.35 | 0.40 | mm | ||
| c | 0.10 | 0.18 | 0.25 | mm | ||
| A1 | 0.00 | 0.05 | 0.10 | mm | ||
| e | 1.20 | 1.30 | 1.40 | mm | ||
| HE | 2.00 | 2.10 | 2.40 | mm | ||
| L | 0.20 | 0.38 | 0.56 | mm |
1806141923_LRC-LP1480WT1G_C172434.pdf
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