Power Field Effect Transistor MATSUKI ME3205T N Channel Logic Enhancement Mode for Power Management
Key Attributes
Model Number:
ME3205T
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
193pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
8.793nF@25V
Pd - Power Dissipation:
150W
Gate Charge(Qg):
133nC@10V
Mfr. Part #:
ME3205T
Package:
TO-220
Product Description
Product Overview
The ME3205T is an N-Channel logic enhancement mode power field-effect transistor manufactured using high cell density, DMOS trench technology. This design minimizes on-state resistance, offering an extremely low RDS(ON) and exceptional DC current capability. It is suitable for power management and DC/DC converter applications.
Product Attributes
- Brand: Not explicitly stated, but implied by model numbers ME3205T/ME3205T-G.
- Origin: Not explicitly stated.
- Material: Not explicitly stated.
- Color: Not explicitly stated.
- Certifications: ME3205T (Pb-free), ME3205T-G (Green product-Halogen free).
Technical Specifications
| Parameter | Symbol | Limit | Min | Typ | Max | Unit | Notes |
| Absolute Maximum Ratings (TC=25 Unless Otherwise Noted) | |||||||
| Drain-Source Voltage | VDS | 60 | V | ||||
| Gate-Source Voltage | VGS | 20 | V | ||||
| Continuous Drain Current* | ID | TC=25 | 105 | A | *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A. | ||
| Continuous Drain Current* | ID | TC=70 | 88 | A | |||
| Pulsed Drain Current | IDM | 419 | A | ||||
| Maximum Power Dissipation | PD | TC=25 | 150 | W | |||
| Maximum Power Dissipation | PD | TC=70 | 105 | W | |||
| Operating Junction Temperature | TJ | -55 | 175 | ||||
| Thermal Resistance-Junction to Case** | RJC | 1 | /W | ** The device mounted on 1in2 FR4 board with 2 oz copper. | |||
| Electrical Characteristics (TC =25 Unless Otherwise Specified) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2 | 4 | V | ||
| Gate-Body Leakage | IGSS | VDS=0V, VGS=20V | 100 | nA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=60, VGS=0V | 1 | A | |||
| Drain-Source On-Resistance* | RDS(ON) | VGS=10V, ID=66A | 4.9 | 6.5 | m | * | |
| Diode Forward Voltage* | VSD | IS=66A, VGS=0V | 1.3 | V | * | ||
| Dynamic Characteristics (VDD=44V, VGS=10V, ID=66A) | |||||||
| Total Gate Charge | Qg | 133 | nc | ||||
| Gate-Source Charge | Qgs | 42.5 | nc | ||||
| Gate-Drain Charge | Qgd | 40.5 | nc | ||||
| Capacitance (VDS=25V, VGS=0V, f=1MHz) | |||||||
| Input Capacitance | Ciss | 8793 | pF | ||||
| Output Capacitance | Coss | 361 | pF | ||||
| Reverse Transfer Capacitance | Crss | 193 | pF | ||||
| Gate Resistance | Rg | VDS=0V, VGS=0V, f=1MHz | 1 | ||||
| Switching Characteristics (VDD=28V, ID=66A, VGS =10V, RG=6.8, RL=0.5) | |||||||
| Turn-On Delay Time | td(on) | 60.9 | ns | ||||
| Turn-On Rise Time | tr | 219 | ns | ||||
| Turn-Off Delay Time | td(off) | 114 | ns | ||||
| Turn-Off Fall Time | tf | 34.3 | ns | ||||
| Notes: a, pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing. b, Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. | |||||||
2410121502_MATSUKI-ME3205T_C2693567.pdf
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