Power Transistor P Channel MATSUKI ME9435 with Logic Enhancement Mode and DMOS Trench Technology
Key Attributes
Model Number:
ME9435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.1A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
50mΩ@10V,5.3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
50pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
446pF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
6.2nC@4.5V
Mfr. Part #:
ME9435
Package:
SOP-8
Product Description
Product Overview
The ME9435 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process significantly reduces on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its design is particularly suited for applications requiring low power loss within a very small outline surface mount package.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Series: ME9435/ME9435-G
- Certifications: Pb-free (ME9435), Green product-Halogen free (ME9435-G)
- Technology: P-Channel, DMOS trench technology
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (TA=25) | ID | -5.1 | A | |
| Continuous Drain Current (TA=70) | ID | -4.1 | A | |
| Pulsed Drain Current | IDM | -20 | A | |
| Maximum Power Dissipation (TA=25) | PD | 2.5 | W | |
| Maximum Power Dissipation (TA=70) | PD | 1.6 | W | |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Junction-to-Ambient Thermal Resistance | RJA | 50 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Electrical Characteristics (TA =25 Unless Otherwise Specified) | ||||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0, ID=-250A |
| Gate Threshold Voltage | VGS(th) | -1 to -3 | V | VDS=VGS, ID=-250A |
| Gate Body Leakage | IGSS | 100 | nA | VDS=0V, VGS=20V |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-30V, VGS=0V |
| Drain-Source On-Resistance (VGS=-10V, ID= -5.3A) | RDS(ON) | 50 to 60 | m | |
| Drain-Source On-Resistance (VGS=-4.5V, ID= -4.2A) | RDS(ON) | 70 to 90 | m | |
| Diode Forward Voltage | VSD | -0.9 to -1.2 | V | IS=-5.3A, VGS=0V |
| Dynamic Characteristics (TJ =25 Noted) | ||||
| Total Gate Charge | Qg | 13 | nC | VDS=-15V,VGS=-10V,ID=-5.3A |
| Total Gate Charge | Qg | 6.2 | nC | VDS=-15V,VGS=-4.5V,ID=-5.3A |
| Gate-Source Charge | Qgs | 3.5 | nC | |
| Gate-Drain Charge | Qgd | 2 | nC | |
| Input Capacitance | Ciss | 446 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 55 | pF | |
| Reverse Transfer Capacitance | Crss | 50 | pF | |
| Turn-On Delay Time | td(on) | 29 | ns | VDD=-15V, RL =15 ID=-1A, VGEN=-10V RG=6 |
| Turn-On Rise Time | tr | 13 | ns | |
| Turn-Off Delay Time | td(off) | 39 | ns | |
| Turn-Off Fall Time | tf | 5.5 | ns | |
2410121657_MATSUKI-ME9435_C709768.pdf
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