MOSFET MagnaChip Semicon MMD90R1K4PRH with low gate charge and low switching loss in TO 252 package
Key Attributes
Model Number:
MMD90R1K4PRH
Product Custom Attributes
Mfr. Part #:
MMD90R1K4PRH
Package:
DPAK
Product Description
Product Overview
The MMD90R1K4P is a power MOSFET utilizing Magnachip's advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling technology. This device provides designers with the advantages of low EMI and low switching loss.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Material: Super Junction Technology
- Package: TO-252
- Packing: Reel
- RoHS Status: Compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Rating | |||||||
| Drain source voltage | VDSS | 900 | V | ||||
| Gate source voltage | VGSS | ±30 | V | ||||
| Continuous drain current | ID | 5.0 | A | TC = 25°C | |||
| 3.0 | A | TC = 100°C | |||||
| Pulsed drain current | IDM | 15 | A | ||||
| Power dissipation | PD | 83 | W | ||||
| Single - pulse avalanche energy | EAS | 68 | mJ | ||||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | ||||
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns | ||||
| Storage temperature | Tstg | °C | -55 | 150 | |||
| Maximum operating junction Temperature | Tj | °C | 150 | ||||
| Thermal Characteristics | |||||||
| Thermal resistance, junction-case max | Rthjc | 1.5 | °C/W | ||||
| Thermal resistance, junction-ambient max | Rthja | 62.5 | °C/W | ||||
| Static Characteristics | |||||||
| Drain source breakdown voltage | V(BR)DSS | 900 | V | VGS = 0V, ID = 0.25mA | 900 | ||
| Gate threshold voltage | VGS(th) | V | VDS = VGS, ID = 0.25mA | 2 | 3 | 4 | |
| Zero gate voltage drain current | IDSS | uA | VDS = 900V, VGS = 0V | 1 | |||
| Gate leakage current | IGSS | nA | VGS = ±30V, VDS = 0V | 100 | |||
| Drain-source on state resistance | RDS(ON) | Ω | VGS = 10V, ID = 2.5A | 1.26 | 1.49 | ||
| Dynamic Characteristics | |||||||
| Input capacitance | Ciss | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 474 | |||
| Output capacitance | Coss | pF | 438 | ||||
| Reverse transfer capacitance | Crss | pF | 14 | ||||
| Effective output capacitance energy related | Co(er) | VDS = 0V to 720V, VGS = 0V, f = 1.0MHz | 15 | ||||
| Turn on delay time | td(on) | ns | VGS = 10V, RG = 25Ω, VDS = 450V, ID = 5A | 14 | |||
| Rise time | tr | ns | 23 | ||||
| Turn off delay time | td(off) | ns | 44 | ||||
| Fall time | tf | ns | 21 | ||||
| Total gate charge | Qg | nC | VGS = 10V, VDS = 720V, ID = 5A | 13.6 | |||
| Gate source charge | Qgs | 3.4 | |||||
| Gate drain charge | Qg d | 5.8 | |||||
| Gate resistance | RG | Ω | VGS = 0V, f = 1.0MHz | 2.3 | |||
| Reverse Diode Characteristics | |||||||
| Continuous diode forward current | IS | A | 5 | ||||
| Diode forward voltage | VSD | V | IS = 5A, VGS = 0V | 1.4 | |||
| Reverse recovery time | trr | ns | IS = 5A di/dt = 100A/us VDD = 100V | 486 | |||
| Reverse recovery charge | Qrr | uC | 2.5 | ||||
| Reverse recovery current | Irrm | A | 10.2 | ||||
2509121533_MagnaChip-Semicon-MMD90R1K4PRH_C51891820.pdf
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