Low Resistance N Channel Power MOSFET MATSUKI ME2306A Suitable for Notebook and Cellular Phone Power
Key Attributes
Model Number:
ME2306A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.38A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@2.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
480pF
Output Capacitance(Coss):
70pF
Pd - Power Dissipation:
1.39W
Gate Charge(Qg):
15.5nC@10V
Mfr. Part #:
ME2306A
Package:
SOT-23
Product Description
Product Overview
The ME2306A is an N-Channel logic enhancement mode power field-effect transistor featuring high cell density and DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its low in-line power loss is well-suited for very small outline surface mount packages.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Certifications: Pb-free (ME2306A), Green product-Halogen free (ME2306A-G)
Technical Specifications
| Parameter | Symbol | Maximum Ratings | Unit | Limit | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | Drain-Source Voltage | VDS | 30 | V | ||||
| Gate-Source Voltage | VGS | ±12 | V | |||||
| Continuous Drain Current (TA=25℃) | ID | 5.38 | A | |||||
| Continuous Drain Current (TA=70℃) | ID | 4.30 | A | |||||
| Pulsed Drain Current | IDM | 21.5 | ||||||
| Maximum Power Dissipation (TA=25℃) | PD | 1.39 | W | |||||
| Maximum Power Dissipation (TA=70℃) | PD | 0.89 | W | |||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ℃ | |||||
| Thermal Resistance-Junction to Ambient* | RΘJA | 90 | ℃/W | |||||
| Diode Forward Voltage (IS=1.25A, VGS=0V) | VSD | 0.8 | 1.2 | V | ||||
| Static Parameters | Drain-Source Breakdown Voltage (VGS=0V, ID=250μA) | V(BR)DSS | 30 | V | ||||
| Gate Threshold Voltage (VDS=VGS, ID=250μA) | VGS(th) | 0.7 | 1.4 | V | ||||
| Gate-Body Leakage Current (VDS=0V, VGS=±12V) | IGSS | ±100 | nA | |||||
| Zero Gate Voltage Drain Current (VDS=30V, VGS=0V) | IDSS | 1 | μA | |||||
| Drain-Source On-Resistance (VGS=10V, ID=4A) | RDS(ON) | 25 | 32 | mΩ | ||||
| Drain-Source On-Resistance (VGS=4.5V, ID=3.5A) | RDS(ON) | 29 | 38 | mΩ | ||||
| Drain-Source On-Resistance (VGS=2.5V, ID=2.8A) | RDS(ON) | 39 | 50 | mΩ | ||||
| Dynamic Parameters | Total Gate Charge | Qg | 15.5 | nC | ||||
| Gate-Source Charge | Qgs | 3.2 | ||||||
| Gate-Drain Charge | Qgd | 3.5 | ||||||
| Gate Resistance (f =1MHz) | Rg | 0.7 | Ω | |||||
| Input Capacitance (VDS=15V, VGS=0V, f=1MHZ) | Ciss | 480 | pF | |||||
| Output Capacitance | Coss | 70 | ||||||
| Reverse Transfer Capacitance | Crss | 18 | ||||||
| Switching Characteristics | Turn-On Delay Time (VDD=15V, RL =15Ω, ID=1A, VGEN=10V, RG=6Ω) | td(on) | 8.5 | ns | ||||
| Rise Time | tr | 17 | ns | |||||
| Turn-Off Delay Time | td(off) | 31 | ns | |||||
| Fall Time | tf |
2410121457_MATSUKI-ME2306A_C165219.pdf
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