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quality Power MOSFET MagnaChip Semicon MMFT70R380PTH 700V N channel device with low gate charge and low EMI factory
quality Power MOSFET MagnaChip Semicon MMFT70R380PTH 700V N channel device with low gate charge and low EMI factory

Power MOSFET MagnaChip Semicon MMFT70R380PTH 700V N channel device with low gate charge and low EMI

Key Attributes
Model Number: MMFT70R380PTH
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
11A
RDS(on):
340mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Input Capacitance(Ciss):
1.061nF
Pd - Power Dissipation:
32.4W
Output Capacitance(Coss):
823pF
Gate Charge(Qg):
34nC@10V
Mfr. Part #:
MMFT70R380PTH
Package:
TO-220FT
Product Description

Product Overview

The MMFT70R380P is a 700V, 0.38 N-channel MOSFET utilizing Magnachip's advanced super junction technology. This design achieves very low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. The device offers low EMI and low switching loss, providing an advantage for designers.

Product Attributes

  • Brand: Magnachip Semiconductor Ltd.
  • Package: TO-220FT
  • Packing: Tube
  • Certifications: Halogen Free
  • Material: Green Package Pb Free Plating

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitTest Condition
Drain Source Breakdown voltageV(BR)DSS700--VVGS = 0V, ID=0.25mA
Gate Threshold VoltageVGS(th)234VVDS = VGS, ID=0.25mA
Zero Gate Voltage Drain CurrentIDSS--1AVDS = 600V, VGS = 0V
Gate Leakage CurrentIGSS--100nAVGS = 30V, VDS =0V
Drain-Source On State ResistanceRDS(ON)-0.340.38VGS = 10V, ID = 3.2 A
Input CapacitanceCiss-1061-pFVDS = 25V, VGS = 0V, f = 1.0MHz
Output CapacitanceCoss-823-pFVDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer CapacitanceCrss-50-pFVDS = 25V, VGS = 0V, f = 1.0MHz
Effective Output Capacitance Energy RelatedCo(er)-30--VDS = 0V to 560V, VGS = 0V,f = 1.0MHz
Turn On Delay Timetd(on)-20-nsVGS = 10V, RG = 25, VDS = 350V, ID = 11A
Rise Timetr-38-nsVGS = 10V, RG = 25, VDS = 350V, ID = 11A
Turn Off Delay Timetd(off)-101-nsVGS = 10V, RG = 25, VDS = 350V, ID = 11A
Fall Timetf-38-nsVGS = 10V, RG = 25, VDS = 350V, ID = 11A
Total Gate ChargeQg-34-nCVGS = 10V, VDS = 560V, ID = 11A
Gate Source ChargeQgs-6.7-nCVGS = 10V, VDS = 560V, ID = 11A
Gate Drain ChargeQg-22.4-nCVGS = 10V, VDS = 560V, ID = 11A
Gate ResistanceRG-3.5-VGS = 0V, f = 1.0MHz
Continuous Diode Forward CurrentISD--11A
Diode Forward VoltageVSD--1.4VISD = 11A, VGS = 0V
Reverse Recovery Timetrr-385-nsISD = 11A di/dt = 100 A/s VDD = 100V
Reverse Recovery ChargeQrr-4.8-CISD = 11A di/dt = 100 A/s VDD = 100V
Reverse Recovery CurrentIrrm-25.0-AISD = 11A di/dt = 100 A/s VDD = 100V
Drain Source voltageVDSS--700V
Gate Source voltageVGSS--30V
Continuous drain currentID--11ATC=25
Continuous drain currentID--7ATC=100
Pulsed drain currentIDM--33A
Power dissipationPD--32.4W
Single-pulse avalanche energyEAS--215mJ
MOSFET dv/dt ruggednessdv/dt--50V/ns
Diode dv/dt ruggednessdv/dt--15V/ns
Storage temperatureTstg-55-150
Maximum operating junction temperatureTj--150
Thermal resistance, junction-case maxRthjc--3.85/W
Thermal resistance, junction-ambient maxRthja--62.5/W

Applications

  • PFC Power Supply Stages
  • Switching Applications
  • Adapter
  • Motor Control
  • DC DC Converters

2509121533_MagnaChip-Semicon-MMFT70R380PTH_C27059095.pdf

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