N Channel MOSFET LRC L2N7002KWT1G with ESD Protection RoHS Compliant and SC 70 SOT 323 Package Type

Key Attributes
Model Number: L2N7002KWT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.7Ω@5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.2pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
34pF@25V
Pd - Power Dissipation:
300mW
Mfr. Part #:
L2N7002KWT1G
Package:
SC-70
Product Description

Product Overview

The L2N7002KWT1G and S-L2N7002KWT1G are N-Channel Small Signal MOSFETs designed for automotive and general applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These devices offer ESD protection and are RoHS compliant and Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • AEC-Q101 Qualified (S-prefix variant)
  • PPAP Capable (S-prefix variant)
  • ESD Protected
  • Package Type: SC-70 (SOT-323)

Technical Specifications

Parameter Symbol Limits (Min.) Limits (Typ.) Limits (Max.) Unit Notes
Drain-Source Voltage VDSS - - 60 Vdc
Gate-Source Voltage VGS - - ±20 Vdc
Drain Current ID - 380 - mAdc
Pulsed Drain Current IDM - 1.5 - Amps (tp=10µs)
Source Current (Body Diode) IS - 300 - mAdc
Drain-Source Breakdown Voltage VBRDSS 60 - - Vdc (VGS = 0, ID = 250µAdc)
Drain-Source Breakdown Voltage Temperature Coefficient VBRDSS/TJ - - 71 µV/ºC
Zero Gate Voltage Drain Current IDSS - - 100 nAdc (TJ = 25ºC, VGS = 0, VDS = 60 Vdc)
Zero Gate Voltage Drain Current IDSS - - 500 nAdc (TJ = 125ºC, VGS = 0, VDS = 50 Vdc)
Gate-Body Leakage Current, Forward IGSSF - - 10 µµAdc (VGS = 20 Vdc)
Gate-Body Leakage Current, Reverse IGSSR - - -10 µµAdc (VGS = -20 Vdc)
Gate Threshold Voltage VGS(TH) 1.0 - - Vdc (VDS = VGS, ID = 250µAdc)
Negative Threshold Temperature Coefficient VGS(TH)/TJ - -1.4 - mV/ºC
Static Drain-Source On-State Resistance RDS(on) - 2.3 2.7 Ω (VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain-Source On-State Resistance RDS(on) - 1.0 - Ω (VGS = 10 Vdc, ID = 500 mAdc)
Forward Transconductance gfs - 80 - mS (VDS = 5.0 Vdc, ID = 200 mAdc)
Input Capacitance Ciss - 34 - pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance Coss - - 71 pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance Crss - 3 - pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Turn-On Delay Time td(on) - - 19 ns (VDS = 10 V, VGEN = 10 V, ID = 500 mA)
Rise Time tr - - 12 ns (VDS = 10 V, VGEN = 10 V, ID = 500 mA)
Turn-Off Delay Time td(off) - - 3.8 ns (VDS = 10 V, VGEN = 10 V, ID = 500 mA)
Fall Time tf - - 3.4 ns (VDS = 10 V, VGEN = 10 V, ID = 500 mA)
Diode Forward On-Voltage VSD - 0.7 - V (TJ = 25ºC, IS = 115 mAdc, VGS = 0 V)
Diode Forward On-Voltage VSD - - 1.5 V (TJ = 85ºC, IS = 300 mAdc, VGS = 0 V)
Total Device Dissipation PD - - 320 mW (Steady State, Note 1)
Total Device Dissipation PD - - 417 mW (t<5s, Note 1)
Junction-to-Ambient Thermal Resistance RΘJA - 300 - ºC/W (Steady State, Note 1)
Junction-to-Ambient Thermal Resistance RΘJA - - 300 ºC/W (t<5s, Note 1)
Junction and Storage Temperature TJ, Tstg -55 - 150 ºC
Lead Temperature for Soldering Purposes TL - - 260 ºC (1/8 " from case for 10 s)
ESD Rating (HBM, Method 3015) - 2000 - V Gate-Source
ESD Rating (HBM, Method 3015) - 300 - R
Model Marking Shipping
L2N7002KWT1G SK 3000/Tape&Reel
L2N7002KWT1G SK 10000/Tape&Reel
S-L2N7002KWT1G SK 3000/Tape&Reel
S-L2N7002KWT1G SK 10000/Tape&Reel

Notes:

  • 1. FR5 = 1.0×0.75×0.062 in.
  • 2. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤2.0%.

2111041830_LRC-L2N7002KWT1G_C2912011.pdf

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