N Channel MOSFET LRC L2N7002KWT1G with ESD Protection RoHS Compliant and SC 70 SOT 323 Package Type
Product Overview
The L2N7002KWT1G and S-L2N7002KWT1G are N-Channel Small Signal MOSFETs designed for automotive and general applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These devices offer ESD protection and are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- AEC-Q101 Qualified (S-prefix variant)
- PPAP Capable (S-prefix variant)
- ESD Protected
- Package Type: SC-70 (SOT-323)
Technical Specifications
| Parameter | Symbol | Limits (Min.) | Limits (Typ.) | Limits (Max.) | Unit | Notes |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 60 | Vdc | |
| Gate-Source Voltage | VGS | - | - | ±20 | Vdc | |
| Drain Current | ID | - | 380 | - | mAdc | |
| Pulsed Drain Current | IDM | - | 1.5 | - | Amps | (tp=10µs) |
| Source Current (Body Diode) | IS | - | 300 | - | mAdc | |
| Drain-Source Breakdown Voltage | VBRDSS | 60 | - | - | Vdc | (VGS = 0, ID = 250µAdc) |
| Drain-Source Breakdown Voltage Temperature Coefficient | VBRDSS/TJ | - | - | 71 | µV/ºC | |
| Zero Gate Voltage Drain Current | IDSS | - | - | 100 | nAdc | (TJ = 25ºC, VGS = 0, VDS = 60 Vdc) |
| Zero Gate Voltage Drain Current | IDSS | - | - | 500 | nAdc | (TJ = 125ºC, VGS = 0, VDS = 50 Vdc) |
| Gate-Body Leakage Current, Forward | IGSSF | - | - | 10 | µµAdc | (VGS = 20 Vdc) |
| Gate-Body Leakage Current, Reverse | IGSSR | - | - | -10 | µµAdc | (VGS = -20 Vdc) |
| Gate Threshold Voltage | VGS(TH) | 1.0 | - | - | Vdc | (VDS = VGS, ID = 250µAdc) |
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ | - | -1.4 | - | mV/ºC | |
| Static Drain-Source On-State Resistance | RDS(on) | - | 2.3 | 2.7 | Ω | (VGS = 5.0 Vdc, ID = 50 mAdc) |
| Static Drain-Source On-State Resistance | RDS(on) | - | 1.0 | - | Ω | (VGS = 10 Vdc, ID = 500 mAdc) |
| Forward Transconductance | gfs | - | 80 | - | mS | (VDS = 5.0 Vdc, ID = 200 mAdc) |
| Input Capacitance | Ciss | - | 34 | - | pF | (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) |
| Output Capacitance | Coss | - | - | 71 | pF | (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) |
| Reverse Transfer Capacitance | Crss | - | 3 | - | pF | (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) |
| Turn-On Delay Time | td(on) | - | - | 19 | ns | (VDS = 10 V, VGEN = 10 V, ID = 500 mA) |
| Rise Time | tr | - | - | 12 | ns | (VDS = 10 V, VGEN = 10 V, ID = 500 mA) |
| Turn-Off Delay Time | td(off) | - | - | 3.8 | ns | (VDS = 10 V, VGEN = 10 V, ID = 500 mA) |
| Fall Time | tf | - | - | 3.4 | ns | (VDS = 10 V, VGEN = 10 V, ID = 500 mA) |
| Diode Forward On-Voltage | VSD | - | 0.7 | - | V | (TJ = 25ºC, IS = 115 mAdc, VGS = 0 V) |
| Diode Forward On-Voltage | VSD | - | - | 1.5 | V | (TJ = 85ºC, IS = 300 mAdc, VGS = 0 V) |
| Total Device Dissipation | PD | - | - | 320 | mW | (Steady State, Note 1) |
| Total Device Dissipation | PD | - | - | 417 | mW | (t<5s, Note 1) |
| Junction-to-Ambient Thermal Resistance | RΘJA | - | 300 | - | ºC/W | (Steady State, Note 1) |
| Junction-to-Ambient Thermal Resistance | RΘJA | - | - | 300 | ºC/W | (t<5s, Note 1) |
| Junction and Storage Temperature | TJ, Tstg | -55 | - | 150 | ºC | |
| Lead Temperature for Soldering Purposes | TL | - | - | 260 | ºC | (1/8 " from case for 10 s) |
| ESD Rating (HBM, Method 3015) | - | 2000 | - | V | Gate-Source | |
| ESD Rating (HBM, Method 3015) | - | 300 | - | R | ||
| Model | Marking | Shipping | ||||
| L2N7002KWT1G | SK | 3000/Tape&Reel | ||||
| L2N7002KWT1G | SK | 10000/Tape&Reel | ||||
| S-L2N7002KWT1G | SK | 3000/Tape&Reel | ||||
| S-L2N7002KWT1G | SK | 10000/Tape&Reel |
Notes:
- 1. FR5 = 1.0×0.75×0.062 in.
- 2. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤2.0%.
2111041830_LRC-L2N7002KWT1G_C2912011.pdf
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