20V P Channel Enhancement Mode MOSFET LRC LP2301LT1G with low on resistance and simple drive requirements
Key Attributes
Model Number:
LP2301LT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
97.26pF@6V
Number:
1 P-Channel
Input Capacitance(Ciss):
882.5pF
Pd - Power Dissipation:
570mW
Gate Charge(Qg):
15.23nC@4.5V
Mfr. Part #:
LP2301LT1G
Package:
SOT-23
Product Description
Product Overview
This 20V P-Channel Enhancement-Mode MOSFET, manufactured using an advanced trench process technology and high-density cell design, offers ultra-low on-resistance. It features fully characterized avalanche voltage and current, improved shoot-through FOM, and simple drive requirements. The device is compliant with RoHS requirements and is Halogen Free. Its small package outline and surface mount capability make it suitable for various electronic applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: RoHS, Halogen Free
- Package Type: SOT-23
- Device Type: P-Channel Enhancement-Mode MOSFET
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| DraintoSource Breakdown Voltage | V(BR)DSS | -20 | - | - | V | VGS = 0 V, ID = -250 A |
| Gate Threshold Voltage | VGS(TH) | -0.4 | - | 0.9 | V | VGS = VDS, ID = -250 A |
| Zero Gate Voltage Drain Current | IDSS | - | - | -1 | A | VDS=-9.6V, VGS=0V |
| GatetoSource Leakage Current | IGSS | - | - | 100 | nA | VDS = 0 V, VGS = 8 V |
| Static DraintoSource On Resistance | RDS(on) | - | 69 | 100 | m | VGS = -2.5 V, ID = -2 A |
| Static DraintoSource On Resistance | RDS(on) | - | 83 | 150 | m | VGS = -4.5 V, ID =-2.8 A |
| Forward Transconductance | gfs | - | 6.5 | - | S | VDS = -5 V, ID = -4 A |
| Total Gate Charge | Qg | - | 15.23 | - | nC | VGS =-4.5 V, VDS = -6 V, ID = -2.8 A |
| GatetoSource Charge | Qgs | - | 5.49 | - | nC | VGS =-4.5 V, VDS = -6 V, ID = -2.8 A |
| GatetoDrain Charge | Qgd | - | 2.74 | - | nC | VGS =-4.5 V, VDS = -6 V, ID = -2.8 A |
| TurnOn Delay Time | td(on) | - | 17.28 | - | ns | VDS=-6V, RL =6 , RGEN=6 , VGS=- 4.5V |
| Rise Time | tr | - | 3.73 | - | ns | VDS=-6V, RL =6 , RGEN=6 , VGS=- 4.5V |
| TurnOff Delay Time | td(off) | - | 36.05 | - | ns | VDS=-6V, RL =6 , RGEN=6 , VGS=- 4.5V |
| Fall Time | tf | - | 6.19 | - | ns | VDS=-6V, RL =6 , RGEN=6 , VGS=- 4.5V |
| Input Capacitance | Ciss | - | 882.5 | - | pF | VGS = 0 V, f = 1.0 MHz, VDS= -6 V |
| Output Capacitance | Coss | - | 145.5 | - | pF | VGS = 0 V, f = 1.0 MHz, VDS= -6 V |
| Reverse Transfer Capacitance | Crss | - | 97.26 | - | pF | VGS = 0 V, f = 1.0 MHz, VDS= -6 V |
| Max. Diode Forward Current | IS | - | - | -2.4 | A | - |
| Forward Diode Voltage | VSD | - | -0.8 | -1.2 | V | VGS = 0 V, IS = -0.75A |
| DraintoSource Voltage | VDSS | -20 | - | - | V | - |
| GatetoSource Voltage | VGS | - | - | 8 | V | - |
| Continuous Drain Current | ID | - | -2.3 | - | A | TA = 25C |
| Continuous Drain Current | ID | - | -0.57 | - | A | TA = 75C |
| Pulsed Drain Current | IDM | - | -8 | - | A | - |
| Maximum Power Dissipation | PD | - | 0.9 | - | W | TA = 25C |
| Thermal Resistance-Junction to Ambient | RJA | - | 175 | - | C/W | Note 1 |
| Operating and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | C | - |
| Device Marking | - | LP2301LT1G / LP2301LT3G | 01 | - | - | - |
| Shipping | - | - | 3000/Tape&Reel | 10000/Tape&Reel | - | - |
Note 1: The device mounted on 1in FR4 board with 2 oz copper.
Note 2: Pulse Test: Pulse width 300s, duty cycle 2%.
1810251911_LRC-LP2301LT1G_C77937.pdf
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