amplification and switching transistor MDD Microdiode Semiconductor MMDT3904 dual transistor NPN NPN
Key Attributes
Model Number:
MMDT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT3904
Package:
SOT-363
Product Description
Product Overview
The MMDT3904 is a DUAL TRANSISTOR (NPN+NPN) featuring epitaxial planar die construction. It is ideal for low power amplification and switching applications, offering high stability and reliability.
Product Attributes
- Brand: Microdiode
- Marking: K6N
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 200 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 625 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 5 | V | ||
| Collector cut-off current | ICEX | CE V =30V, VEB(off)=3V | 50 | nA | ||
| Collector cut-off current | ICBO | VCB=30V, IE=0 | 50 | nA | ||
| Emitter cut-off current | IEBO | EB V =5V, IC=0 | 50 | nA | ||
| DC current gain | hFE(1) | VCE=1V, IC=1mA | 40 | |||
| hFE(2) | VCE=1V, IC=10mA | 70 | ||||
| hFE(3) | VCE=1V, IC=50mA | 100 | ||||
| hFE(4) | VCE=1V, IC=10mA, IB=1mA | 0.2 | V | |||
| hFE(5) | VCE=1V, IC=50mA, IB=5mA | 0.3 | V | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=10mA, IB=1mA | 0.85 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=50mA, IB=5mA | 0.65 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=10mA, IB=1mA | V | |||
| Base-emitter saturation voltage | VBE(sat) | IC=50mA, IB=5mA | 0.95 | V | ||
| Transition frequency | fT | CE V =20V,IC=10mA, f=100MHz | 300 | MHz | ||
| Collector output capacitance | Cob | VCB=30V, IE=0, f=1MHz | 4 | pF | ||
| Noise figure | NF | VCE=5V, IC=0.1mA, f=1KHz,RS=1K | 5 | dB | ||
| Delay time | td | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA Pulse test: pulse width300us,duty cycle2.0% | 35 | ns | ||
| Rise time | tr | VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA Pulse test: pulse width300us,duty cycle2.0% | 35 | ns | ||
| Storage time | ts | CC V =3V, IC=10mA, IB1= IB2=1mA Pulse test: pulse width300us,duty cycle2.0% | 200 | ns | ||
| Fall time | tf | CC V =3V, IC=10mA, IB1= IB2=1mA Pulse test: pulse width300us,duty cycle2.0% | 50 | ns |
2507221720_MDD-Microdiode-Semiconductor-MMDT3904_C49383124.pdf
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