Single N Channel Trench MOSFET MagnaChip Semicon MDD1951RH Designed for Inverter and General Purpose
Key Attributes
Model Number:
MDD1951RH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
17.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@4.5V,12A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
32.8W
Gate Charge(Qg):
4.8nC@4.5V
Mfr. Part #:
MDD1951RH
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The MDD1951 is a single N-Channel Trench MOSFET from MagnaChip Semiconductor, utilizing advanced trench MOSFET technology. It offers high performance in on-state resistance, switching performance, and reliability, with low RDS(ON) and low gate charge providing superior benefits in applications such as inverters and general-purpose applications.
Product Attributes
- Brand: MagnaChip Semiconductor Ltd.
- Certifications: Halogen Free
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current (Note 2) | ID | TC=25oC (a) | 17.9 | A | ||
| TA=25oC (b) | 4.4 | A | ||||
| Pulsed Drain Current | IDM | 80 | A | |||
| Power Dissipation for Single Operation | PD | TC=25oC | 32.8 | W | ||
| TA=25oC | 2.0 | W | ||||
| Single Pulse Avalanche Energy (Note 3) | EAS | 50 | mJ | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | ~ | +150 | oC | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient(Steady-State) (Note 1) | RJA | 60 | oC/W | |||
| Thermal Resistance, Junction-to-Case | RJC | 3.8 | oC/W | |||
| Electrical Characteristics (TJ =25oC unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250µA, VGS = 0V | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.0 | 2.0 | 3.0 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 60V, VGS = 0V | - | - | 1 | µA |
| Gate Leakage Current | IGSS | VGS = ±20V, VDS = 0V | - | - | 0.1 | µA |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 17A | - | 36 | 45 | mΩ |
| VGS = 4.5V, ID = 12A | - | 44 | 55 | mΩ | ||
| Forward Transconductance | gFS | VDS = 5V, ID = 17A | - | 26 | - | S |
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg | - | 4.8 | - | nC | |
| Gate-Source Charge | Qgs | - | 1.6 | - | nC | |
| Gate-Drain Charge | Qg d | VDS = 30V, ID = 17A, VGS = 4.5V | - | 2.2 | - | nC |
| Input Capacitance | Ciss | - | 470 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 32 | - | pF | |
| Output Capacitance | Coss | VDS = 30V, VGS = 0V, f = 1.0MHz | - | 70 | - | pF |
| Turn-On Delay Time | td(on) | - | 7.4 | - | ns | |
| Turn-On Rise Time | tr | - | 15.2 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 21.2 | - | ns | |
| Turn-Off Fall Time | tf | VGS = 10V ,VDS = 30V, ID = 17A , RGEN = 5Ω | - | 7.6 | - | ns |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 5A, VGS = 0V | - | 0.8 | 1.2 | V |
| Body Diode Reverse Recovery Time | trr | - | 29 | - | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF = 17A, di/dt = 100A/µs | - | 32 | - | nC |
1809291631_MagnaChip-Semicon-MDD1951RH_C108502.pdf
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