650V Field Stop Trench IGBT MagnaChip Semicon MBQ50T65FESCTH designed for loss and high speed switching
Key Attributes
Model Number:
MBQ50T65FESCTH
Product Custom Attributes
Mfr. Part #:
MBQ50T65FESCTH
Package:
TO-247
Product Description
Product Overview
The Magnachip MBQ50T65FESC is a 650V Field Stop Trench IGBT, engineered with advanced technology for high-speed switching and low power loss. It offers excellent quality and high input impedance, making it suitable for demanding applications such as Power Factor Correction (PFC), Uninterruptible Power Supplies (UPS), and inverters. This device also finds application in welders and IH cookers, providing reliable performance with a maximum junction temperature of 175C.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Technology: Field Stop Trench IGBT
- Certifications: Halogen Free
- Package Type: TO-247
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Collector-emitter voltage | VCE | 650 | V | - |
| DC collector current, limited by Tvjmax | IC | 100 | A | TC=25C |
| DC collector current, limited by Tvjmax | IC | 50 | A | TC=100C |
| Pulsed collector current, tp limited by Tjvjmax | ICpuls | 200 | A | - |
| Turn off safe operating area | - | -200 | A | VCE 650V, Tvj 175C |
| Diode forward current limited by Tvjmax | IF | 60 | A | TC=25C |
| Diode forward current limited by Tvjmax | IF | 30 | A | TC=100C |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 200 | A | - |
| Gate-emitter voltage | VGE | 20 | V | - |
| Power dissipation | PD | 375 | W | TC=25C |
| Power dissipation | PD | 188 | W | TC=100C |
| Short circuit withstand time | tsc | 5 | s | VCC 400V, VGE = 15V, Tvj = 150C |
| Operating Junction temperature range | Tvj | -40~175 | C | - |
| Storage temperature range | Tstg | -55~150 | C | - |
| Soldering temperature (Wave soldering 1.6 mm from case for 10s) | - | 260 | C | - |
| Mounting torque, M3 screw | M | 0.6 | Nm | Maximum of mounting processes |
| Thermal Characteristics | ||||
| Thermal resistance junction-to-ambient | RJA | 40 | C/W | - |
| Thermal resistance junction-to-case for IGBT | RJC | 0.4 | C/W | - |
| Thermal resistance junction-to-case for Diode | RJC | 1.2 | C/W | - |
| Features | ||||
| High Speed Switching & Low Power Loss | - | - | - | - |
| VCE(sat) | - | 1.85 | V | @ IC = 50A |
| Eoff | - | 0.55 | mJ | @ TC = 25C |
| High Input Impedance | - | - | - | - |
| trr | - | 80 | ns (typ.) | @diF/dt = 1000A/ s |
| Maximum junction temperature | - | 175 | C | - |
| Applications | ||||
| PFC | - | - | - | - |
| UPS | - | - | - | - |
| PV Inverter | - | - | - | - |
| Welder | - | - | - | - |
| IH Cooker | - | - | - | - |
| Ordering Information | ||||
| Part Number | Marking | Temp. Range | Package | Packing |
| MBQ50T65FESCTH | 50T65FESC | -55~175C | TO-247 | Tube |
| Electrical Characteristics (Tvj = 25C unless otherwise specified) | ||||
| Collector-emitter breakdown voltage | BVCES | 650 | V | IC = 2mA, VGE = 0V |
| Collector-emitter saturation voltage | VCE(sat) | - | V | IC = 50A, VGE =15V, Tvj = 25C |
| Collector-emitter saturation voltage | VCE(sat) | - | V | IC = 50A, VGE =15V, Tvj = 175C |
| Diode forward voltage | VF | - | V | VGE = 0V, IF = 30A, Tvj = 25C |
| Diode forward voltage | VF | - | V | VGE = 0V, IF = 30A, Tvj = 175C |
| Gate-emitter threshold voltage | VGE(th) | 3.8 ~ 6.2 | V | VCE = VGE, IC = 0.5mA |
| Zero gate voltage collector current | ICES | - | A | VCE = 650V, VGE = 0V, Tvj = 25C |
| Gate-emitter leakage current | IGES | - | nA | VGE = 20V, VCE = 0V |
| Dynamic Characteristic | ||||
| Total gate charge | Qg | - | nC | VCE = 520V, IC = 50A, VGE = 15V |
| Gate-emitter charge | Qge | - | - | - |
| Gate-collector charge | Qgc | - | - | - |
| Input capacitance | Cies | - | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Reverse transfer capacitance | Cres | - | - | - |
| Output capacitance | Coes | - | - | - |
| Internal emitter inductance (measured 5mm from case) | LE | - | nH | - |
| Short circuit collector current | IC(SC) | - | A | VGE = 15V, VCC = 400V, tSC 5s, Tvj = 150C (Max. 1000 short circuits, Time between short circuits: 1.0s) |
| Switching Characteristic (Tvj = 25C) | ||||
| Turn-on delay time | td(on) | - | ns | VGE = 15V, VCC = 400V, IC = 50A, RG = 7.9, Inductive Load |
| Rise time | tr | - | - | - |
| Turn-off delay time | td(off) | - | - | - |
| Fall time | tf | - | - | - |
| Turn-on switching energy | Eon | - | mJ | - |
| Turn-off switching energy | Eoff | - | - | - |
| Total switching energy | Ets | - | - | - |
| Switching Characteristic (Tvj = 175C) | ||||
| Turn-on delay time | td(on) | - | ns | VGE = 15V, VCC = 400V, IC = 50A, RG = 7.9, Inductive Load |
| Rise time | tr | - | - | - |
| Turn-off delay time | td(off) | - | - | - |
| Fall time | tf | - | - | - |
| Turn-on switching energy | Eon | - | mJ | - |
| Turn-off switching energy | Eoff | - | - | - |
| Total switching energy | Ets | - | - | - |
| Diode Reverse Recovery Characteristic (Tvj = 25C) | ||||
| Reverse recovery time | trr | - | ns | IF = 30A, diF/dt = 1000A/ s |
| Reverse recovery current | Irr | - | A | - |
| Reverse recovery charge | Qrr | - | C | - |
| Diode Reverse Recovery Characteristic (Tvj = 175C) | ||||
| Reverse recovery time | trr | - | ns | IF = 30A, diF/dt = 1000A/ s |
| Reverse recovery current | Irr | - | A | - |
| Reverse recovery charge | Qrr | - | C | - |
| Physical Dimensions (TO-247) | ||||
| Dimension | Min(mm) | Max(mm) | Unit | Note |
| A | 4.70 | 5.31 | mm | - |
| A1 | 2.20 | 2.60 | mm | - |
| A2 | 1.50 | 2.49 | mm | - |
| b | 0.99 | 1.40 | mm | - |
| b1 | 2.59 | 3.43 | mm | - |
| b2 | 1.65 | 2.39 | mm | - |
| c | 0.38 | 0.89 | mm | - |
| D | 20.30 | 21.46 | mm | - |
| D1 | 13.08 | - | mm | - |
| E | 15.45 | 16.26 | mm | - |
| E1 | 13.06 | 14.02 | mm | - |
| E2 | 4.32 | 5.49 | mm | - |
| e | 5.45 | - | BSC | - |
| L | 19.81 | 20.57 | mm | - |
| L1 | - | 4.50 | mm | - |
| P | 3.50 | 3.70 | mm | - |
| Q | 5.38 | 6.20 | mm | - |
| S | 6.15 | - | BSC | - |
2509121506_MagnaChip-Semicon-MBQ50T65FESCTH_C41348474.pdf
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