Surface mount SOT 23 package N channel MOSFET MATSUKI ME2306D featuring high cell density and loss
Key Attributes
Model Number:
ME2306D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@4.5V,5.0A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Input Capacitance(Ciss):
370pF
Output Capacitance(Coss):
68pF
Pd - Power Dissipation:
1.39W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
ME2306D
Package:
SOT-23
Product Description
Product Overview
The ME2306D is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection and a super high-density cell design for extremely low RDS(ON) and exceptional DC current capability.
Product Attributes
- Brand: ME (Matsuki Electric/Force mos)
- Product Type: N-Channel 30V (D-S) MOSFET, ESD Protected
- Packaging: SOT-23
- Certifications: Pb-free (ME2306D), Green product-Halogen free (ME2306D-G)
- Origin: DCC (DCC Official Release)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25 | 5.3 | A | ||
| TA=70 | 4.2 | |||||
| Pulsed Drain Current | IDM | 21.2 | A | |||
| Maximum Power Dissipation | PD | TA=25 | 1.39 | W | ||
| TA=70 | 0.89 | |||||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient | RJA | * | 90 | /W | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.5 | 3 | V |
| Gate Leakage Current | IGSS | VDS=0V, VGS=±16V | ±10 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | µA | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=6.7A | 26 | 31 | mΩ | |
| VGS=4.5V, ID=5.0A | 40 | 52 | ||||
| Diode Forward Voltage | VSD | IS=1.7A, VGS=0V | 0.8 | 1.2 | V | |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHZ | 370 | pF | ||
| Output Capacitance | COSS | 68 | ||||
| Reverse Transfer Capacitance | Crss | 21 | ||||
| Gate Resistance | Rg | f=1MHz | 1.9 | Ω | ||
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=6.7A | 12 | nC | ||
| VDS=15V, VGS=4.5V, ID=6.7A | 5.7 | |||||
| Gate-Source Charge | Qgs | VDS=15V, VGS=4.5V, ID=6.7A | 3.0 | nC | ||
| Gate-Drain Charge | Qgd | VDS=15V, VGS=4.5V, ID=6.7A | 2.1 | nC | ||
| Turn-On Delay Time | td(on) | VDD=15V, RL =15Ω, ID=1.0A, VGEN=10V, RG=6Ω | 9.2 | ns | ||
| Turn-On Rise Time | tr | 13 | ||||
| Turn-Off Delay Time | td(off) | 33 | ||||
| Turn-Off Fall Time | tf | 3.7 |
2410121631_MATSUKI-ME2306D_C165220.pdf
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