Extended Trench Gate N Channel MOSFET MATSUKI MEE3710-G for Medium Voltage Power Management Solutions
Product Overview
The MEE3710-G is a N-Channel enhancement mode power field effect transistor utilizing Force-MOS patented Extended Trench Gate (ETG) technology. This advanced technology is optimized to reduce on-state resistance and gate charge, while enhancing avalanche capability. It is particularly suitable for medium voltage applications such as chargers, adapters, notebook computer power management, and other lighting dimming powered circuits. Its low in-line power loss makes it ideal for very small outline surface mount packages.
Product Attributes
- Brand: Force-MOS
- Product Type: N-Channel 100V (D-S) MOSFET
- Model: MEE3710-G
- Product Color: Green product
- Certifications: Halogen free
- Technology: Extended Trench Gate (ETG)
- Package: TO-252-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | 100 | V | |||
| VGS | ±20 | V | ||||
| ID | TC=25 | 37 | A | |||
| ID | TC=70 | 30 | A | |||
| IAS | L=0.5mH | 16 | A | |||
| EAS | L=0.5mH | 64 | mJ | |||
| IDM | 151 | A | ||||
| Power Dissipation | PD | TC=25 | 69 | W | ||
| PD | TC=70 | 44 | W | |||
| RJC | Junction to Case | 1.8 | /W | |||
| Temperature Range | TJ, TSTG | -55 | 150 | |||
| Electrical Characteristics | BVDSS | VGS=0V, ID=250A | 100 | V | ||
| VGS(th) | VDS=VGS, ID=250A | 2 | 4 | V | ||
| IGSS | VDS=0V, VGS=±20V | ±100 | nA | |||
| IDSS | VDS=100V, VGS=0V | 1 | μA | |||
| RDS(ON) | VGS=10V, ID=28A | 19 | 23 | mΩ | ||
| VsD | Is=28A, VGS=0V | 1.2 | V | |||
| Qg | VDS=80V,VGS=10V,ID=28A | 25 | nC | |||
| Dynamic Characteristics | Qgs | 10 | nC | |||
| Qgd | 6 | nC | ||||
| Ciss | VDS=25V,VGS=0V, f=1.0MHz | 1728 | pF | |||
| Coss | 530 | pF | ||||
| Crss | 32 | pF | ||||
| Switching Characteristics | td(on) | VDS=50V, RL =1.8Ω, VGS=10V,RG=2.5Ω, ID=28A | 22 | ns | ||
| tr | 60 | ns | ||||
| td(off) | 25 | ns | ||||
| tf | 16 | ns | ||||
| Diode Characteristics | Trr | IF=28A,VGS=0V,di/dt=100A/μs | 40 | ns | ||
| Qrr | 60 | nC |
2411220243_MATSUKI-MEE3710-G_C709770.pdf
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