MDD Microdiode Semiconductor MDD30P04D 40V P Channel MOSFET with 100 percent UIS tested power device
Key Attributes
Model Number:
MDD30P04D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
RDS(on):
18mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
132pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
2.26nF
Gate Charge(Qg):
17nC
Mfr. Part #:
MDD30P04D
Package:
TO-252
Product Description
Product Overview
The MDD30P04D is a 40V P-Channel Enhancement Mode MOSFET designed for power management applications in telecom, industrial automation, motor drives, and uninterruptible power supplies. It utilizes Microdiode's advanced Power Trench technology, optimized for low on-state resistance and superior switching performance with a best-in-class soft body diode. Key features include extremely low reverse recovery charge, a maximum RDS(on) of 18m, and 100% UIS tested.
Product Attributes
- Brand: MDD
- Origin: Craftsman-Made Consciention Chip (Implied from text)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -40 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=VGS, ID=-250A | -1 | A | ||
| Drain-Source Leakage Current | IDSS | VDS=-40V, VGS=0V | -1.0 | A | ||
| Gate Threshold Voltage | VGS(TH) | VGS=0V, ID=-250A | -1.5 | -2.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-12A | 18 | m | ||
| Continuous Drain Current | ID | Calculated continuous current based on maximum allowable junction temperature. | -30 | A | ||
| Pulsed Drain Current | ID | Repetitive rating, pulse width limited by max. junction temperature. | -40 | A | ||
| Single Pulsed Avalanche Energy | EAS | TJ=25C, VDD=-35V, VGS=-10V, L= 0.5mH, Rg = 25, IAS=-14.5A. | 2260 | mJ | ||
| Power Dissipation | PD | TA=25C unless otherwise noted | 40 | W | ||
| Thermal Resistance, steady-state | RJA | 50 | C/W | |||
| Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | ID=-250A, VGS=0V | -40 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Note 1 | -30 | A | ||
| Single Pulsed Avalanche Energy | EAS | Note 3 | 2500 | mJ | ||
| Thermal Resistance, steady-state | RJA | 40 | C/W | |||
| Drain-Source Leakage Current | IDSS | VDS=-40V, VGS=0V | -1.0 | A | ||
| Gate-Source Leakage Current | IGSS | VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | ID=-250A, VDS=VGS | -1.0 | -1.5 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-12A | 18 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-8A | 26 | m | ||
| Turn on Delay Time | td(on) | VGS =-10V, VDD=-20V, ID=-10A, RG=3 | 7 | ns | ||
| Turn on Rise Time | tr | VGS =-10V, VDD=-20V, ID=-10A, RG=3 | 9 | ns | ||
| Turn Off Fall Time | tf | VGS =-10V, VDD=-20V, ID=-10A, RG=3 | 20 | ns | ||
| Turn Off Delay Time | td(off) | VGS =-10V, VDD=-20V, ID=-10A, RG=3 | 24 | ns | ||
| Input Capacitance | Ciss | VGS=0V, VDS=-20V, f=1MHz | 2260 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-20V, f=1MHz | 154 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-20V, f=1MHz | 132 | pF | ||
| Total Gate Charge | Qg | VGS=-10V, VDS=-20V, ID=-10A | 17 | nC | ||
| Gate Source Charge | Qgs | VGS=-10V, VDS=-20V, ID=-10A | 4.5 | nC | ||
| Gate Drain Charge | Qgd | VGS=-10V, VDS=-20V, ID=-10A | 4 | nC | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | ID=-250A, VGS=0V | -40 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=20V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=-40V, VGS=0V | -1.0 | A | ||
| Gate Threshold Voltage | VGS(TH) | ID=-250A, VDS=VGS | -1.0 | -1.5 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-12A | 18 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-8A | 26 | m | ||
| Drain-Source Diode Forward Voltage | VSD | IS=-20A, VGS=0V | -0.8 | -1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=-10A, di/dt=100A/s | 19 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=-10A, di/dt=100A/s | 5 | nC |
2504281715_MDD-Microdiode-Semiconductor-MDD30P04D_C48615222.pdf
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