Trench Power LV MOSFET MDD Microdiode Semiconductor MDD50N03D 30V 50A for High Current Load Applications
Key Attributes
Model Number:
MDD50N03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-50℃~+150℃
RDS(on):
6.5mΩ@10V;8.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
164pF
Number:
1 N-channel
Output Capacitance(Coss):
201pF
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
1.015nF
Gate Charge(Qg):
23.6nC
Mfr. Part #:
MDD50N03D
Package:
TO-252
Product Description
Product Overview
The MDD50N03D is a 30V N-Channel Enhancement Mode MOSFET featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation, a high-density cell design for low RDS(ON), and is Halogen Free. This MOSFET is suitable for high current load applications, load switching, hard switched, and high frequency circuits, as well as uninterruptible power supplies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Halogen Free
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 50 | A | |||
| Power Dissipation | PD | 28 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -50 | ~+150 | |||
| Pulsed Drain Current (Note 1) | IDM | 150 | A | |||
| Avalanche Energy Single Pulsed (Note 2) | EAS | 46 | mJ | |||
| Junction-to-Case Thermal Resistance (Note 3) | RJC | 4.4 | / W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 30 | -- | -- | V |
| Gate-Source Leakage Current | IDSS | VGS=0V | -- | -- | ±100 | µA |
| Drain-Source Leakage Current | IGSS | VDS=30V, VGS=0V | -- | -- | 1 | nA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250µA | 1.0 | 2.2 | -- | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | -- | 9 | -- | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=15A | -- | 12 | -- | mΩ |
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | -- | 1115 | -- | pF |
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1MHz | -- | 176 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1MHz | -- | 128 | -- | pF |
| Total Gate Charge | Qg | VDS=20V, VGS=10V, ID=20A (Note1,2) | -- | 23.6 | -- | nC |
| Gate Source Charge | Qgs | VDS=20V, VGS=10V, ID=20A (Note1,2) | -- | 3.9 | -- | nC |
| Gate Drain Charge | Qgd | VDS=20V, VGS=10V, ID=20A (Note1,2) | -- | 7 | -- | nC |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=20V, VGS =10V, ID=2A, RG=3Ω (Note1,2) | -- | 7 | -- | ns |
| Turn on Rise Time | tr | VDS=20V, VGS =10V, ID=2A, RG=3Ω (Note1,2) | -- | 19 | -- | ns |
| Turn Off Delay Time | td(off) | VDS=20V, VGS =10V, ID=2A, RG=3Ω (Note1,2) | -- | 24 | -- | ns |
| Turn Off Fall Time | tf | VDS=20V, VGS =10V, ID=2A, RG=3Ω (Note1,2) | -- | 24 | -- | ns |
| Source Drain Diode Characteristics | ||||||
| Source drain current (Body Diode) | ISD | -- | -- | 50 | A | |
| Drain-Source Diode Forward Voltage | VSD | IS=15A, VGS=0V | -- | 0.85 | 1.2 | V |
| Max Pulsed Current | ISM | -- | -- | 150 | A | |
| Body Diode Reverse Recovery Time | trr | IF=20A, VGS=0V, dI/dt=100A/µs | -- | -- | 8.3 | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, VGS=0V, dI/dt=100A/µs | -- | -- | 0.2 | nC |
2509111013_MDD-Microdiode-Semiconductor-MDD50N03D_C5357578.pdf
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