ME110N10F N Channel trench MOSFET with high DC current capability and low on state resistance design
Key Attributes
Model Number:
ME110N10F
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
7mΩ@10V,70A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
490pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
6.14nF@25V
Pd - Power Dissipation:
108W
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
ME110N10F
Package:
TO-220F-3
Product Description
Product Overview
The ME110N10T/ME110N10F are N-Channel enhancement mode power logic trench MOSFETs utilizing high cell density DMOS technology. This advanced process is optimized to minimize on-state resistance, offering exceptionally low RDS(ON) and high DC current capability. They are designed for applications requiring efficient power switching.
Product Attributes
- Brand: Matsuki (implied by datasheet revision notes)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | ME110N10T/ME110N10F (TO-220AB) | ME110N10F (TO-220F) | Unit |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 100 | 100 | V |
| Gate-Source Voltage | VGSS | ±25 | ±25 | V |
| Continuous Drain Current (TC=25) | ID | 140 | 140 | A |
| Continuous Drain Current (TC=100) | ID | 105 | 105 | A |
| Pulsed Drain Current | IDM | 550 | 550 | A |
| Maximum Power Dissipation (TC=25) | PD | 217 | 217 | W |
| Maximum Power Dissipation (TC=100) | PD | 108 | 108 | W |
| Operating Junction Temperature | TJ | -55 to 175 | -55 to 175 | |
| Thermal Resistance-Junction to Case | RJC | 1.0 | 1.0 | /W |
| Electrical Characteristics (TA =25 Unless Otherwise Specified) | ||||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | BVDSS | 100 | 100 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 2 - 4 | 2 - 4 | V |
| Gate Leakage Current (VDS=0V, VGS=±25V) | IGSS | ±100 | ±100 | nA |
| Zero Gate Voltage Drain Current (VDS=100V, VGS=0V) | IDSS | 1 | 1 | μA |
| Drain-Source On-Resistance (VGS=10V, ID=70A) | RDS(ON) | 6.2 - 7.5 | 6.2 - 7.5 | mΩ |
| Diode Forward Voltage (IS=70A, VGS=0V) | VSD | 0.8 - 1.0 | 0.8 - 1.0 | V |
| Dynamic Characteristics (VDS=25V, VGS=0V, f=1MHz) | ||||
| Input Capacitance | Ciss | 6140 | 6140 | pF |
| Output Capacitance | Coss | 943 | 943 | pF |
| Reverse Transfer Capacitance | Crss | 490 | 490 | pF |
| Switching Characteristics (VDD=50V, RG =6Ω, VGS=10V, IDS 70A) | ||||
| Turn-On Delay Time | td(on) | 23 | 23 | ns |
| Turn-On Rise Time | tr | 39 | 39 | ns |
| Turn-Off Delay Time | td(off) | 86 | 86 | ns |
| Turn-Off Fall Time | tf | 46 | 46 | ns |
2411220330_MATSUKI-ME110N10F_C709734.pdf
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