Compact Dual N Channel Power Transistor MATSUKI ME4954-G with Logic Enhancement Mode and Dissipation
Key Attributes
Model Number:
ME4954-G
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
65mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
46pF@20V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.106nF@20V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
-
Mfr. Part #:
ME4954-G
Package:
SOP-8
Product Description
Product Overview
The ME4954 is a Dual N-Channel logic enhancement mode power field effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits. Its low in-line power loss and very small outline surface mount package are key advantages.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Variants: ME4954 (Pb-free), ME4954-G (Green product-Halogen free)
- Package Type: SOP-8
- Certifications: Pb-free, Halogen free (for ME4954-G)
Technical Specifications
| Parameter | Symbol | ME4954/ME4954-G | Unit |
| Drain-Source Voltage | VDS | 100 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA=25°C) | ID | 4 | A |
| Continuous Drain Current (TA=70°C) | ID | 3.2 | A |
| Pulsed Drain Current | IDM | 16 | A |
| Maximum Power Dissipation (TA=25°C) | PD | 2 | W |
| Maximum Power Dissipation (TA=70°C) | PD | 1.3 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Thermal Resistance-Junction to Ambient (TA=25°C) | RθJA | 62.5 | ° C/W |
| Drain-Source Breakdown Voltage (VGS=0V, ID=250μA) | V(BR)DSS | 100 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250μA) | VGS(th) | 1 to 2.5 | V |
| Gate Leakage Current (VDS=0V, VGS=±20V) | IGSS | ±100 | nA |
| Zero Gate Voltage Drain Current (VDS=80V, VGS=0V) | IDSS | 1 | μA |
| Drain-Source On-State Resistance (VGS=10V, ID=4A) | RDS(ON) | 65 to 80 | mΩ |
| Drain-Source On-State Resistance (VGS=4.5V, ID=3.2A) | RDS(ON) | 75 to 98 | mΩ |
| Diode Forward Voltage (IS=12A, VGS=0V) | VSD | 1.3 | V |
| Total Gate Charge (VDS=80V, VGS=10V, ID=4A) | Qg | 28.8 | nC |
| Total Gate Charge (VDS=80V, VGS=5V, ID=4A) | Qg | 17.4 | nC |
| Gate-Source Charge | Qgs | 9.9 | nC |
| Gate-Drain Charge | Qgd | 5.6 | nC |
| Input Capacitance (VDS=20V, VGS=0V, F=1MHz) | Ciss | 1106 | pF |
| Output Capacitance (VDS=20V, VGS=0V, F=1MHz) | Coss | 73 | pF |
| Reverse Transfer Capacitance (VDS=20V, VGS=0V, F=1MHz) | Crss | 46 | pF |
| Gate Resistance (VDS=0V, VGS=0V, f=1MHz) | Rg | 2 | Ω |
| Turn-On Delay Time (VDS=50V, RL=12.5Ω, VGEN=5V, RG=4.7Ω, ID=4A) | td(on) | 27.3 | ns |
| Turn-On Rise Time | tr | 89.9 | ns |
| Turn-Off Delay Time | td(off) | 36.8 | ns |
| Turn-Off Fall Time | tf | 11 | ns |
2411220233_MATSUKI-ME4954-G_C709725.pdf
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