MDD Microdiode Semiconductor MDD100N03D N Channel MOSFET engineered for power management applications
Key Attributes
Model Number:
MDD100N03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
RDS(on):
3.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
310pF
Input Capacitance(Ciss):
2.8nF
Pd - Power Dissipation:
3.9W
Output Capacitance(Coss):
366pF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
MDD100N03D
Package:
TO-252
Product Description
Product Overview
This N-Channel MOSFET is manufactured using MDD's advanced Power Trench technology, optimized for minimal on-state resistance and superior switching performance with an excellent soft body diode. It is designed for power management applications in telecom, industrial automation, motor drives, and uninterruptible power supplies, as well as current switching in DC/DC and AC/DC sub-systems.
Product Attributes
- Brand: MDD
- Origin: Shenzhen (implied by company name)
- Certifications: RoHS Compliant
- Features: Max RDS(on) = 3.6m at VGS = 10 V, ID = 30 A; Extremely Low Reverse Recovery Charge, Qg; 100% UIS Tested
- Marking: MDD 100N03D, XXY (Date code)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | (Note 1) TA=25C | 100 | A | ||
| Single Pulsed Avalanche Energy | EAS | (Note 3) | 156 | mJ | ||
| Power Dissipation | PD | steady-state | 3.9 | W | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 32 | C/W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Source-Drain Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=20V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 1.2 | 1.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=30A | 3.6 | m | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=15V, ID=30A, RG=3 | 10 | ns | ||
| Turn-on Rise Time | tr | ns | ||||
| Turn-off Fall Time | tf | ns | ||||
| Turn-off Delay Time | td(off) | ns | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | IF=30A, VGS=0V | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=30A, di/dt=100A/s | 18 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=30A, di/dt=100A/s | 5 | nC | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 2800 | pF | ||
| Output Capacitance | Coss | 310 | pF | |||
| Reverse Transfer Capacitance | Crss | 366 | pF | |||
| Total Gate Charge | Qg | VGS=10V, ID=30A | 60 | nC | ||
2504101957_MDD-Microdiode-Semiconductor-MDD100N03D_C45350859.pdf
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