N channel MOSFET MASPOWER MS80N65ICC0 suitable for power factor correction switched mode power supplies and UPS systems
Key Attributes
Model Number:
MS80N65ICC0
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
80A
RDS(on):
40mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
4.346nF
Pd - Power Dissipation:
227W
Gate Charge(Qg):
95nC@10V
Mfr. Part #:
MS80N65ICC0
Package:
TO-247
Product Description
Product Overview
The MS80N65ICC0 H1.02 Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features ultra-low RDS(on) and gate charge, ensuring high efficiency and fast switching. This device is 100% UIS tested and RoHS compliant, making it suitable for power factor correction (PFC), switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS).
Product Attributes
- Brand: Maspower
- Model: MS80N65ICC0 H1.02
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Transient Gate-Source Voltage | VGSM | ±30 | V | |||
| Continuous Gate-Source Voltage (DC) | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25℃ | 80 | A | ||
| TC=100℃ | 45 | A | ||||
| Drain Current - pulse (note 1) | IDM | 240 | A | |||
| Avalanche current-single pulse | IAS | 12 | A | |||
| Single Pulsed Avalanche Energy (note 2) | EAS | 250 | mJ | |||
| Repetitive Avalanche Energy | EAR | 1.25 | mJ | |||
| Power Dissipation | PD | 227 | W | |||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +150 | ℃ | ||
| Solding temperature,wave solding only allowed at leads.(1.6mm for 10s) | Tsold | 260 | ℃ | |||
| Electrical Characteristics | ||||||
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250uA,VGS=0V | 650 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25℃ | 2 | uA | ||
| Gate-body leakage current | IGSS | VDS=0V,VGS=20V | 100 | nA | ||
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=35A TJ=25℃ | 40 | 60 | mΩ | |
| TJ=150℃ | 96 | mΩ | ||||
| Forward Transconductance | gfs | VDS=10V,ID=35A (note 4) | 3.2 | S | ||
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHz open drain | 0.85 | Ω | ||
| Input capacitance | Ciss | VDS=400V, VGS=0V, f=250kHz | 4346 | pF | ||
| Output capacitance | Coss | 75 | pF | |||
| Reverse transfer capacitance | Crss | 12 | pF | |||
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=400V,ID=25A, VGS=10V,RG=3.3Ω (note 4,5) | 27 | ns | ||
| Turn-On rise time | tr | 15 | ns | |||
| Turn-Off delay time | td(off) | 80 | ns | |||
| Turn-Off Fall time | tf | 9 | ns | |||
| Total Gate Charge | Qg | VDS=400V,ID=25A, VGS=0 to 10V (note4,5) | 95 | nC | ||
| Gate-Source charge | Qgs | 24 | nC | |||
| Gate-Drain charge | Qgd | 32 | nC | |||
| Gate-plateau voltage | Vp | 5.4 | V | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Continuous Diode Forward Current | IS | TC=25℃ | 80 | A | ||
| Diode Pulsed Current | ISM | TC=25℃ | 240 | A | ||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=35A | 0.84 | 1.2 | V | |
| Reverse recovery time | trr | VGS=0V,IS=46A dIF/dt=60A/us VR=400V (note 4) | 730 | ns | ||
| Reverse recovery charge | Qrr | 13000 | uC | |||
| Peak reverse recovery current | IRRM | 36 | A | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | Rth(J-C) | 0.55 | ℃/W | |||
| Thermal Resistance, Junction-to-Ambient,minimal Footprint | Rth(J-A) | 62 | ℃/W | |||
2508261540_MASPOWER-MS80N65ICC0_C50726510.pdf
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