High Current MOSFET MASPOWER MS220N10JDT0 Designed for DC Choppers and Linear Current Regulators

Key Attributes
Model Number: MS220N10JDT0
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
220A
RDS(on):
1.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
52pF
Input Capacitance(Ciss):
12.3nF
Output Capacitance(Coss):
1.435nF
Pd - Power Dissipation:
272W
Gate Charge(Qg):
176nC@10V
Mfr. Part #:
MS220N10JDT0
Package:
TO-220
Product Description

Product Overview

The MS220N10JDT0(P0) H1.01 Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features low RDS(on), fast switching speeds, 100% avalanche tested, low package inductance, and a low intrinsic rectifier. This device is ideal for use in DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power supplies, and linear current regulators.

Product Attributes

  • Brand: Maspower
  • Model: MS220N10JDT0(P0) H1.01

Technical Specifications

ParameterSymbolTests conditionsMinTypeMaxUnit
Absolute Ratings
Drain-Source VoltageVDSS100V
Drain Current - continuousIDT=25220A
Drain Current - continuousIDT=100117A
Drain Current - pulse (note 1)IDM890A
Gate-Source VoltageVGSS20V
Single Pulsed Avalanche Energy (note 2)EAS1881.6mJ
Avalanche Current(note 1)IAR87A
Peak Diode Recovery dv/dt(note 3)dv/dt45V/ns
Power DissipationPDTC=25272W
Power DissipationPDTC=100132W
Operating Temperature and Storage Temperature RangeTj,TSTG-55~+150
Maximum Lead Temperature for Soldering PurposesTL300
Electrical Characteristics (TCASE=25 unless otherwise specified)
Drain-Source VoltageBVDSSID=250uA,VGS=0V100--V
Drain cut-off currentIDSSVDS=100V,Tj=25--1A
Drain cut-off currentIDSSVDS=100V,Tj=125--500A
Gate-body leakage currentIGSSVDS=0V,VGS=20V--100nA
Gate Threshold VoltageVGS(th)VDS=VGS,ID=250uA2.03.04.0V
Static Drain-Source On-ResistanceRDS(ON)VGS=10V,ID=50A (note 4)-1.92.45m
Forward TransconductancegfsVDS =10V , ID=50A (note 4)-9-S
Dynamic Characteristics
Input capacitanceCissVDS=50V, VGS=0V, f=1.0MHz-12.3-nF
Output capacitanceCoss-1435-pF
Reverse transfer capacitanceCrss-52-pF
Gate ResistanceRgF=1MHz-2.0-
Switching Characteristics
Turn-On delay timetd(on)VDD=50V,ID=20A, RG=2 VGS=10V-36-ns
Turn-On rise timetr-25-ns
Turn-Off delay timeTd(off)-52-ns
Turn-Off Fall timetf-29-ns
Total Gate ChargeQgVDS=50V,ID=50A, VGS=10V(note5)-176-nC
Gate-Source chargeQgs-56.2-nC
Gate-Drain chargeQg d-41.1-nC
Drain-Source Diode Characteristics
Drain-Source VoltageVSDVGS=0V,IS=50A (note 4)--1.2V
Continuous Drain-Source CurrentIS--220A
Pulsed Drain-Source CurrentISM--890A
Reverse recovery timetrrVGS=0V,IF=50A dIF/dt=100A/us-35-ns
Reverse recovery chargeQrr-123-nC
Thermal Characteristics
Thermal Resistance, Junction-to-CaseRJC0.46/W
Thermal Resistance, Junction-to-AmbientRJA62.5/W

Ordering Information

Part numberSilkscreenPackage
MS220N10JDT0MS220N10JDT0TO-220
MS220N10JDP0MS220N10JDP0TOLL

Notes:
1Pulse width limited by maximum junction temperature
2L=0.5mH, IAS=87A, VDD=50V, RG=25 ,Starting TJ=25
3ISD IDM,di/dt 300A/s,VDDBVDSS, Starting TJ=25
4Pulse TestPulse Width 300s,Duty Cycle2
5Essentially independent of operating temperature


2508261540_MASPOWER-MS220N10JDT0_C50726505.pdf

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