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quality MDD Microdiode Semiconductor MDD16N65F 650V N Channel MOSFET with Avalanche Energy Tested Capability factory
quality MDD Microdiode Semiconductor MDD16N65F 650V N Channel MOSFET with Avalanche Energy Tested Capability factory

MDD Microdiode Semiconductor MDD16N65F 650V N Channel MOSFET with Avalanche Energy Tested Capability

Key Attributes
Model Number: MDD16N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
16A
RDS(on):
480mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.64nF@25V
Pd - Power Dissipation:
44W
Gate Charge(Qg):
53.9nC@10V
Mfr. Part #:
MDD16N65F
Package:
TO-220F
Product Description

650V N-Channel Enhancement Mode MOSFET MDD16N65F/MDD16N65P

This 650V N-Channel Enhancement Mode MOSFET offers ultra-low gate charge, low reverse transfer capacitance, and fast switching capabilities. It is designed for high efficiency in switch mode power supplies, electronic lamp ballasts, and LED power supplies. The device has undergone avalanche energy testing and features improved dv/dt capability for high ruggedness.

General Features

  • Ultra low gate charge
  • Low reverse transfer Capacitance
  • Fast switching capability
  • Avalanche energy tested
  • Improved dv/dt capability, high ruggedness

Applications

  • High efficiency switch mode power supplies
  • Electronic lamp ballasts based on half bridge
  • LED power supplies

Technical Specifications

Parameter Symbol MDD16N65F (TO-220F-3L) MDD16N65P (TO-220-3L) Unit
Absolute Maximum Ratings
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS 30 V
Continuous Drain Current ID 16 A
Power Dissipation PD 44 180 W
Junction Temperature TJ 150 C
Storage Temperature Tstg -55 ~150 C
Pulsed Drain Current (Note 1) IDM 64 A
Avalanche Energy Single Pulsed (Note 2) EAS 605 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 5 V/ns
Diode pulse current IS,pulse 64 A
Continuous diode forward current IS 16 A
Thermal Characteristics
Thermal resistance, Junction-to-case RJC 2.85 0.69 C/W
Thermal resistance, Junction-to-ambient RJA 110 62.5 C/W
Dynamic Electrical Characteristics
Input Capacitance Ciss 2640 pF
Output Capacitance Coss 235 pF
Reverse Transfer Capacitance Crss 15 pF
Total Gate Charge Qg 53.9 nC
Gate Source Charge Qgs 13.4 nC
Gate Drain Charge Qgd 20.1 nC
Switching Characteristics
Turn on Delay Time td(on) 15.4 ns
Turn on Rise Time tr 41.0 ns
Turn Off Delay Time td(off) 88.7 ns
Turn Off Fall Time tf 17.8 ns
Source Drain Diode Characteristics
Source drain current(Body Diode) ISD 16 A
Drain-Source Diode Forward Voltage VSD 1.5 V
Max Pulsed Current ISM 64 A
Body Diode Reverse Recovery Time trr 448.4 ns
Body Diode Reverse Recovery Charge Qrr 5.38 uC
Electrical Characteristics
Drain-Source Breakdown Voltage V(BR)DSS 650 V
Gate-Source Leakage Current IGSS 100 nA
Drain-Source Leakage Current IDSS 1 uA
Gate Threshold Voltage VGS(TH) 2.0 - 4.0 V
Drain-Source On-State Resistance RDS(ON) 0.6 0.48

2408090958_MDD-Microdiode-Semiconductor-MDD16N65F_C5299408.pdf

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