Surface Mount Power MOSFET MATSUKI ME96N03-G Ideal for Notebook Computers and Mobile Device Circuits
Key Attributes
Model Number:
ME96N03-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
107.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
277pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.892nF@25V
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
ME96N03-G
Package:
TO-252-3L
Product Description
Product Overview
The ME96N03-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Green product
- Certifications: Halogen free
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250A |
| Gate Threshold Voltage | VGS(th) | 1 - 3 | V | VDS=VGS, ID=250A |
| Gate-Body Leakage | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 2.9 - 3.4 | mΩ | VGS=10V, ID=40A* |
| Drain-Source On-Resistance | RDS(ON) | 4.8 - 6.3 | mΩ | VGS=4.5V, ID=30A* |
| Diode Forward Voltage | VSD | 1.2 | V | IS=40A, VGS=0V* |
| Total Gate Charge | Qg | 62 | nC | VDS=24V,VGS=10V, ID=30A |
| Total Gate Charge | Qg | 32.4 | nC | VDS=24V,VGS=4.5V, ID=30A |
| Gate-Source Charge | Qgs | 12.5 | ||
| Gate-Drain Charge | Qgd | 17 | ||
| Input Capacitance | Ciss | 2892 | pF | VDS=25V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 311 | pF | |
| Reverse Transfer Capacitance | Crss | 277 | pF | |
| Turn-On Delay Time | td(on) | 29.2 | ns | VDS=15V, RL=0.5Ω, VGS=10V,RG=2.4Ω, ID=30A |
| Turn-On Rise Time | tr | 353 | ns | |
| Turn-Off Delay Time | td(off) | 57.7 | ns | |
| Turn-Off Fall Time | tf | 19.5 | ns | |
| Continuous Drain Current (TC=25) | ID | 107.2 | A | |
| Continuous Drain Current (TC=70) | ID | 85.8 | A | |
| Pulsed Drain Current | IDM | 429 | A | |
| Maximum Power Dissipation (TC=25) | PD | 62.5 | W | |
| Maximum Power Dissipation (TC=70) | PD | 40 | W | |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Case* | RθJC | 2 | Ω/W | *The device mounted on 1in² FR4 board with 2 oz copper. |
| Gate-Source Voltage | VGS | ±20 | V | Maximum Ratings |
| Drain-Source Voltage | VDS | 30 | V | Maximum Ratings |
2410121449_MATSUKI-ME96N03-G_C2841363.pdf
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