MDD Microdiode Semiconductor MDDG1C120R040K3 N Channel SiC MOSFET 1200V for Robust Power Electronics
Key Attributes
Model Number:
MDDG1C120R040K3
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@20V
Gate Threshold Voltage (Vgs(th)):
4V@10mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 N-channel
Output Capacitance(Coss):
171pF
Pd - Power Dissipation:
278W
Input Capacitance(Ciss):
2.44nF
Gate Charge(Qg):
-
Mfr. Part #:
MDDG1C120R040K3
Package:
TO-247-3L
Product Description
Product Overview
The MDDG1C120R040K3 is a 1200V N-Channel SiC Power MOSFET designed for high-efficiency power conversion applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its robust design is resistant to latch-up, making it suitable for demanding applications such as solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, motor drives, and pulsed power applications. This device contributes to higher system efficiency, reduced cooling requirements, increased power density, and enables higher system switching frequencies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Carbide (SiC)
- Color: Not specified
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions | Note |
| Maximum Ratings | |||||||
| Drain - Source Voltage | VDSmax | 1200 | V | VGS = 0 V, ID = 100 A | |||
| Gate - Source Voltage | VGSmax | -10 | +25 | V | Absolute maximum values | ||
| Gate - Source Voltage | VGSop | -5 | +20 | V | Recommended operational values | ||
| Continuous Drain Current | ID | 55 | A | VGS = 20 V, TC = 25C | Fig. 19 | ||
| Continuous Drain Current | ID | 36 | A | VGS = 20 V, TC = 100C | |||
| Pulsed Drain Current | ID(pulse) | 160 | A | Pulse width tP limited by Tjmax | Fig. 22 | ||
| Power Dissipation | PD | 278 | W | TC=25C, TJ = 150 C | Fig. 20 | ||
| Operating Junction and Storage Temperature | TJ , Tstg | -55 | +150 | C | |||
| Solder Temperature | TL | 260 | C | 1.6mm (0.063) from case for 10s | |||
| Mounting Torque | Md | 8.8 | Nm lbf-in | M3 or 6-32 screw | |||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, ID = 100 A | |||
| Gate Threshold Voltage | VGS(th) | 2.0 | 3.2 | 4 | V | VDS = VGS , ID = 10mA | Fig. 11 |
| Gate Threshold Voltage | VGS(th) | 2.4 | V | VDS = VGS , ID = 10mA,TJ = 150 C | |||
| Zero Gate Voltage Drain Current | IDSS | 1 | 100 | A | VDS = 1200 V, VGS = 0 V | ||
| Gate-Source Leakage Current | IGSS | 250 | nA | VGS = 20 V, VDS = 0 V | |||
| Drain-Source On-State Resistance | RDS(on) | 44 | 52 | m | VGS = 20 V, ID = 40 A | Fig. 4,5,6 | |
| Drain-Source On-State Resistance | RDS(on) | 82 | m | VGS = 20 V, ID = 40 A, TJ = 150 C | |||
| Transconductance | gfs | 18.2 | S | VDS= 20 V, IDS= 40 A | Fig. 7 | ||
| Transconductance | gfs | 17.2 | S | VDS= 20 V, IDS= 40 A, TJ = 150 C | |||
| Input Capacitance | Ciss | 2440 | pF | VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV | Fig. 17,18 | ||
| Output Capacitance | Coss | 171 | pF | VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV | Fig. 17,18 | ||
| Reverse Transfer Capacitance | Crss | 11 | pF | VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV | Fig. 17,18 | ||
| Stored Energy | Eoss | 89 | J | VDS = 1000 V, f = 1 MHz, VAC = 25 mV | Fig 16 | ||
| Turn-On Switching Energy (Body Diode) | EON | 1.7 | mJ | VDS = 800 V, VGS = -5/20 V, ID = 40A, RG(ext) = 2.5, L= 99 H | Fig. 25 | ||
| Turn Off Switching Energy (Body Diode) | EOFF | 0.4 | VDS = 800 V, VGS = -5/20 V, ID = 40A, RG(ext) = 2.5, L= 99 H | ||||
| Turn-On Switching Energy (External SiC Diode) | EON | 1.3 | VDS = 800 V, VGS = -5/20 V, ID = 40A, RG(ext) = 2.5, L= 99 H | ||||
| Turn Off Switching Energy (External SiC Diode) | EOFF | 0.4 | VDS = 800 V, VGS = -5/20 V, ID = 40A, RG(ext) = 2.5, L= 99 H | ||||
| Turn-On Delay Time | td(on) | 13 | ns | VDD = 800 V, VGS = -5/20 V, ID = 40 A, RG(ext) = 2.5 , RL = 20 | Fig. 27 | ||
| Rise Time | tr | 61 | VDD = 800 V, VGS = -5/20 V, ID = 40 A, RG(ext) = 2.5 , RL = 20 | ||||
| Turn-Off Delay Time | td(off) | 25 | ns | VDD = 800 V, VGS = -5/20 V, ID = 40 A, RG(ext) = 2.5 , RL = 20 | |||
| Fall Time | tf | 13 | VDD = 800 V, VGS = -5/20 V, ID = 40 A, RG(ext) = 2.5 , RL = 20 | ||||
| Internal Gate Resistance | RG(int) | 1.8 | |||||
| Gate to Source Charge | Qgs | 34 | nC | VDS = 800 V, VGS = -5/20 V, ID = 40 A | Fig. 12 | ||
| Gate to Drain Charge | Qgd | 42 | nC | VDS = 800 V, VGS = -5/20 V, ID = 40 A | |||
| Total Gate Charge | Qg | 120 | nC | VDS = 800 V, VGS = -5/20 V, ID = 40 A | |||
| Reverse Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | 3.6 | 4.0 | V | VGS = - 5 V, ISD = 20 A, TJ = 25 C | Fig. 8, 9, 10 | |
| Diode Forward Voltage | VSD | V | VGS = - 5 V, ISD = 20 A, TJ = 150 C | ||||
| Continuous Diode Forward Current | IS | 60 | A | TC= 25 C | Note 1 | ||
| Diode Pulse Current | IS, pulse | 160 | A | VGS = - 5 V, Pulse width tP limited by Tjmax | |||
| Reverse Recovery Time | trr | 54 | ns | VGS = - 5 V, ISD = 40 A, TJ = 25 C, VR = 800 V, dif/dt = 1000 A/s | Note 1 | ||
| Reverse Recovery Charge | Qrr | 283 | nC | VGS = - 5 V, ISD = 40 A, TJ = 25 C, VR = 800 V, dif/dt = 1000 A/s | Note 1 | ||
| Peak Reverse Recovery Current | Irrm | 15 | A | VGS = - 5 V, ISD = 40 A, TJ = 25 C, VR = 800 V, dif/dt = 1000 A/s | Note 1 | ||
| Thermal Characteristics | |||||||
| Thermal Resistance from Junction to Case | RJC | 0.33 | 0.45 | C/W | Fig. 21 | ||
| Thermal Resistance from Junction to Ambient | RJC | 40 | C/W | ||||
2411121055_MDD-Microdiode-Semiconductor-MDDG1C120R040K3_C22370503.pdf
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