NPN Silicon Planar Transistor MCC FMMT618 TP with 0.5 Amp Base Current and RoHS Compliant Lead Free Finish
Key Attributes
Model Number:
FMMT618-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
2.5A
Number:
1 NPN
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT618-TP
Package:
SOT-23
Product Description
FMMT618 NPN Silicon Planar High Performance Transistor
The FMMT618 is a high-performance NPN silicon planar transistor designed for various applications. It features a continuous base current of 0.5 A and a continuous collector current of 2.5 A, with a maximum power dissipation of 350 mW. This device is Halogen Free, "Green" compliant, and meets UL 94 V-0 flammability rating. It is suitable for use in applications requiring reliable and efficient transistor performance.
Product Attributes
- Brand: MCCSEMI.COM
- Type: NPN Silicon Planar High Performance Transistor
- Certifications: Halogen Free, "Green" Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
- Operating Temperature Range: -55 to +150
- Storage Temperature Range: -55 to +150
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector-Emitter Voltage | VCEO | 20 | V | @ 25C Unless Otherwise Specified |
| Emitter-Base Voltage | VEBO | 5 | V | @ 25C Unless Otherwise Specified |
| Continuous Collector Current | IC | 2.5 | A | @ 25C Unless Otherwise Specified |
| Power Dissipation | PD | 350 | mW | @ 25C Unless Otherwise Specified |
| Continuous Base Current | IB | 0.5 | A | @ 25C Unless Otherwise Specified |
| Collector-Base Voltage | VCBO | 20 | V | @ 25C Unless Otherwise Specified |
| Thermal Resistance | Rth(j-a) | 357 | /W | Junction to Ambient |
| Collector-Base Cutoff Current | ICBO | 0.1 | A | VCB=16V, IE=0 |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.0 | V | IC=2.5A, IB=50mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.15 | V | IC=1A, IB=10mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.20 | V | IC=2.5A, IB=50mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.15 | V | IC=1A, IB=10mA |
| Turn-on Time | ton | 170 | ns | VCC=10V, IC=1A, IB1=-IB2=10mA |
| Turn-off Time | toff | 400 | ns | VCC=10V, IC=1A, IB1=-IB2=10mA |
| DC Current Gain | hFE | 200 | - | VCE=2V, IC=2A |
| DC Current Gain | hFE | 100 | - | VCE=2V, IC=4A |
| Collector-Base Breakdown Voltage | V(BR)CBO | 20 | V | IC=100A, IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100A, IC=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 20 | V | IC=10mA, IB=0 |
| Emitter-Base Cutoff Current | IEBO | 0.1 | A | VEB=4V, IC=0 |
| Base-Emitter Voltage | VBE | 1.0 | V | VCE=2V, IC=200mA |
| Base-Emitter Voltage | VBE | 0.15 | V | VCE=2V, IC=2.5A |
| Transition Frequency | fT | 100 | MHz | VCE=10V,IC=50mA,f=100MHz |
| Output Capacitance | Cob | 30 | pF | VCE=2V, IC=10mA, f=1MHz |
2410010102_MCC-FMMT618-TP_C2975568.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
