high voltage IGBT luxin-semi YGW60N65T1 650V 60A trench field stop with stable thermal performance
Key Attributes
Model Number:
YGW60N65T1
Product Custom Attributes
Td(off):
165ns
Pd - Power Dissipation:
312W
Td(on):
56ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
70pF
Input Capacitance(Cies):
3.8nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
158nC@15V
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
130pF
Reverse Recovery Time(trr):
20ns
Switching Energy(Eoff):
890uJ
Turn-On Energy (Eon):
2.2mJ
Mfr. Part #:
YGW60N65T1
Package:
TO-247
Product Description
Product Overview
The YGW60N65T1 is a 650V / 60A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, stable temperature performance, low VCEsat, and easy parallel switching capabilities. Its high breakdown voltage and enhanced avalanche capability make it suitable for demanding applications.
Product Attributes
- Brand: LU-SEMI
- Product Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit | |
| Collector-Emitter Breakdown Voltage | VCE | 650 V | V | ||||
| DC collector current, limited by Tjmax | IC | TC = 25C | 120 | A | |||
| TC = 100C | 60 | A | |||||
| Diode Forward current, limited by Tjmax | IF | TC = 25C | 120 | A | |||
| TC = 100C | 60 | A | |||||
| Continuous Gate-emitter voltage | VGE | 20 | V | ||||
| Transient Gate-emitter voltage | VGE | 30 | V | ||||
| Pulse collector current, VGE =15V, tp limited by Tjmax | ICM | 180 | A | ||||
| Power dissipation, Tj=25C | Ptot | 312 | W | ||||
| Operating junction temperature | Tj | -40 | 175 | C | |||
| Storage temperature | TS | -55 | 175 | C | |||
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | 260 | C | |||||
| Mounting torque, M3 screw | Maximum of mounting processes: 3 M | 0.6 | Nm | ||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.48 | K/W | ||||
| Diode thermal resistance, junction - case | R(j-c) | 1.1 | K/W | ||||
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | ||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250uA | 650 | V | |||
| VGE=0V , IC=1mA | 650 | V | |||||
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.0 | 5.0 | 6.0 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=60A Tj = 25C | 1.85 | V | |||
| VGE=15V, IC=60A Tj = 175C | 2.53 | 2.2 | V | ||||
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V Tj = 25C | 0.1 | A | |||
| VCE = 650V, VGE = 0V Tj = 175C | 40 | 4000 | A | ||||
| Gate-emitter leakage current | IGES | VCE = 0V, VGE =20V | 100 | nA | |||
| Transconductance | gfs | VCE = 20V, IC = 60A | 52 | S | |||
| Input capacitance | Cies | VCE = 30V, VGE = 0V, f = 1 MHz | 3800 | pF | |||
| Output capacitance | Coes | 130 | pF | ||||
| Reverse transfer capacitance | Cres | 70 | pF | ||||
| Gate charge | QG | VCC = 520V, IC = 60A, VGE = 15V | 158 | nC | |||
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C | 56 | ns | |||
| Rise Time | tr | 79 | ns | ||||
| Turn-off Delay Time | td(off) | 165 | ns | ||||
| Fall Time | tf | 81 | ns | ||||
| Turn-on Energy | Eon | 2.2 | mJ | ||||
| Turn-off Energy | Eoff | 0.89 | mJ | ||||
| Diode Forward Voltage | VFM | IF = 60A | 2.0 | V | |||
| Reverse Recovery Time | Trr | IF= 50A, VR = 400V, di/dt= 100A/s | 20 | ns | |||
| Reverse Recovery Current | Irr | 10 | A | ||||
| Reverse Recovery Charge | Qrr | 100 | nC |
2410121257_luxin-semi-YGW60N65T1_C4153742.pdf
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