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quality MCC MMST2222A TP NPN Plastic Encapsulate Transistor Ideal for General Purpose Electronic Applications factory
quality MCC MMST2222A TP NPN Plastic Encapsulate Transistor Ideal for General Purpose Electronic Applications factory

MCC MMST2222A TP NPN Plastic Encapsulate Transistor Ideal for General Purpose Electronic Applications

Key Attributes
Model Number: MMST2222A-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMST2222A-TP
Package:
SOT-323
Product Description

NPN Plastic Encapsulate Transistors MMST2222A

The MMST2222A is an NPN plastic encapsulated transistor designed for general-purpose applications. It features an ultra-small surface mount package, making it suitable for space-constrained designs. This device is Halogen Free and RoHS Compliant, indicating an environmentally conscious product. Its epoxy meets UL 94 V-0 flammability rating, ensuring safety in various applications. The MMST2222A is ideal for use in applications requiring a compact and reliable NPN transistor.

Product Attributes

  • Brand: MCCSEMI.COM
  • Material: Plastic Encapsulate
  • Certifications: Halogen Free. Green Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter Symbol Rating Unit Conditions
Maximum Collector Current ICM 0.6 A
Collector Power Dissipation PC 200 mW
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector-Base Voltage VCBO 75 V
Operating Junction Temperature Range -55 to +150
Storage Temperature Range -55 to +150
Collector-Base Cutoff Current ICEX 10 nA VCE=60V,VBE=3V
Collector Cutoff Current 100 nA VCB=70V,IE=0
Emitter Cutoff Current IEBO 100 nA VEB=3V,IC=0
DC Current Gain (hFE1) hFE1 50 VCE=10V, IC=1mA
DC Current Gain (hFE2) hFE2 100 - 300 VCE=10V, IC=150mA
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V VCE=10V, IC=150mA
Base-Emitter Saturation Voltage VBE(sat) 0.6 - 1.2 V IC=500mA, IB=50mA
Rise Time tr 25 ns VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA
Delay Time td 10 ns VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA
Storage Time ts 225 ns VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA
Fall Time tf 60 ns VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA
Transition Frequency fT 300 MHz IC=500mA, IB=50mA
Output Capacitance Cob 8 pF VCB=10V, IE=0, f=1MHz
Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=10mA, IB=0
Collector-Base Breakdown Voltage V(BR)CBO 75 V IC=10A, IE=0
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10A, IC=0

2409302332_MCC-MMST2222A-TP_C3200332.pdf

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