P Channel Logic Enhancement MOSFET MATSUKI ME85P03 Designed for Low Voltage Power Management Circuits
Key Attributes
Model Number:
ME85P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
372pF
Number:
1 P-Channel
Output Capacitance(Coss):
432pF
Input Capacitance(Ciss):
3.887nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
88nC@10V
Mfr. Part #:
ME85P03
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The ME85P03 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring efficient switching and low power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki Electric/ Force Mos
- Product Series: ME85P03/ ME85P03-G
- Packaging: TO-252
- Certifications: Pb-free (ME85P03), Green product-Halogen free (ME85P03-G)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | VGS=0V, ID=-250A | -30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | - | -3 | V |
| Gate Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | A | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID= -20A | 6.7 | 8 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID= -20A | 8.4 | 11 | m | |
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -0.7 | -1.2 | V | |
| Total Gate Charge | Qg | VDS=-15V, VGS=-10V, ID=-20A | 88 | nC | ||
| Total Gate Charge | Qg | VDS=-15V, VGS=-4.5V, ID=-20A | 44 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V, VGS=-10V, ID=-20A | 12.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-15V, VGS=-10V, ID=-20A | 19.5 | nC | ||
| Input capacitance | Ciss | VDS=-15V, VGS=0V, F=1MHz | 3887 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, F=1MHz | 432 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, F=1MHz | 372 | pF | ||
| Turn-On Delay Time | td(on) | VDS=-15V, RL =15 VGS=-10V, RG=6 ID=-1A | 48 | ns | ||
| Turn-On Rise Time | tr | VDS=-15V, RL =15 VGS=-10V, RG=6 ID=-1A | 20 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=-15V, RL =15 VGS=-10V, RG=6 ID=-1A | 170 | ns | ||
| Turn-Off Fall Time | tf | VDS=-15V, RL =15 VGS=-10V, RG=6 ID=-1A | 54 | ns | ||
| Maximum Power Dissipation | PD | TC=25 | 83 | W | ||
| Maximum Power Dissipation | PD | TC=70 | 53 | W | ||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance-Junction to Case | RJC | 1.5 | /W |
2410121656_MATSUKI-ME85P03_C165222.pdf
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