Small Signal NPN Transistor MCC BCW66H TP with UL 94 V0 Flammability Rating and Tape Reel Packaging
Key Attributes
Model Number:
BCW66H-TP
Product Custom Attributes
Current - Collector Cutoff:
20nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BCW66H-TP
Package:
SOT-23
Product Description
Product Overview
The BCW66H is an NPN small signal transistor designed for automatic insertion. It features low current and low voltage operation, with an epitaxial planar die construction. This device is halogen-free, moisture sensitive level 1, and meets UL 94 V-0 flammability rating. It is lead-free and RoHS compliant.
Product Attributes
- Brand: MCCSEMI
- Construction: Epitaxial Planar Die
- Certifications: Halogen Free ("Green" Device), Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
- Packaging: Tape&Reel (3Kpcs/Reel)
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector-Base Voltage | VCBO | 75 | V | @ 25C Unless Otherwise Specified |
| Collector-Emitter Voltage | VCEO | 45 | V | @ 25C Unless Otherwise Specified |
| Emitter-Base Voltage | VEBO | 5 | V | @ 25C Unless Otherwise Specified |
| Continuous Collector Current | IC | 800 | mA | @ 25C Unless Otherwise Specified |
| Peak Collector Current | ICM | 1000 | mA | @ 25C Unless Otherwise Specified |
| Continuous Base Current | IB | 100 | mA | @ 25C Unless Otherwise Specified |
| Peak Base Current | IBM | 200 | mA | TS=79C |
| Power Dissipation | PD | 330 | mW | Mounted on FR-4 Printed-Circuit Board. |
| Operating Junction Temperature Range | -55 to +150 | |||
| Storage Temperature Range | -55 to +150 | |||
| Thermal Resistance (Junction to Ambient) | 285 | /W | ||
| Thermal Resistance (Junction to Soldering Point) | 215 | /W | ||
| Collector-Base Cutoff Current | ICBO | 20 | nA | VCB=45V, IE=0 |
| Emitter-Base Cutoff Current | IEBO | 20 | A | VEB=4V, IC=0 |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | V | IC=500mA, IB=50mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.25 | V | IC=100mA, IB=10mA |
| DC Current Gain | hFE(1) | 80 | VCE=1V, IC=10mA | |
| DC Current Gain | hFE(2) | 180 | VCE=10V,IC=20mA,f=100MHz | |
| DC Current Gain | hFE(3) | 250 - 630 | VCE=1V, IC=100mA | |
| DC Current Gain | hFE(4) | 100 | VCE=2V, IC=500mA | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 75 | V | IC=10A, IE=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | V | IC=10mA, IB=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=10A, IC=0 |
| Transition Frequency | fT | 100 | MHz | VCE=10V,IC=20mA,f=100MHz |
| Collector-Base Capacitance | CCB | 6 | pF | VCB=45V, IE=0, TA=150C |
| Emitter-Base Capacitance | CEB | 60 | pF | VEB=0.5V, f=1MHz |
2410010102_MCC-BCW66H-TP_C2975550.pdf
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