High Power N MOSFET Megain MGH073N15N Featuring Low Gate Charge for in LED Quick Charger and Networking
Key Attributes
Model Number:
MGH073N15N
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
100A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.3pF
Output Capacitance(Coss):
5.87nF
Pd - Power Dissipation:
178W
Input Capacitance(Ciss):
5.87nF@75V
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
MGH073N15N
Package:
TO-263
Product Description
Product Overview
The MGH073N15N is an N-MOSFET from Mega In, featuring Advanced Trench MOS Technology for low gate charge and low RDS(ON). It is 100% EAS Guaranteed and available as a Green Device. This MOSFET is suitable for applications such as Load Switch, LED Applications, Networking Applications, and Quick Charger.
Product Attributes
- Brand: Mega In
- Part Number: MGH073N15N
- Technology: Advanced Trench MOS
- Certifications: Green Device Available
Technical Specifications
| Parameter | Value | Units | Conditions |
| Drain-Source Voltage (VDS) | 150 | V | |
| Gate-Source Voltage (VGS) | ±20 | V | |
| Drain Current - Continuous (ID) (TC=25) | 100 | A | |
| Drain Current - Continuous (ID) (TC=100) | 63 | A | |
| Pulsed Drain Current (IDM) | 400 | A | |
| Single Pulse Avalanche Energy (EAS) | 784 | mJ | VDD=50V,VGS=10V,L=0.5mH,IAS=56A |
| Avalanche Current (IAS) | 56 | A | |
| Total Power Dissipation (PD) (TC=25°C) | 178 | W | |
| Storage Temperature Range (TSTG) | -55 to 150 | °C | |
| Operating Junction Temperature Range (TJ) | -55 to 150 | °C | |
| Thermal Resistance Junction to Ambient (RθJA) | 50 | °C/W | Tested on a 1 inch² FR-4 board with 2OZ copper |
| Thermal Resistance Junction to Case (RθJC) | 0.7 | °C/W | |
| Drain-Source Breakdown Voltage (BVDSS) | 150 | V | VGS=0V, ID=250uA |
| Drain-Source On-state Resistance (RDS(ON)) | 9.0 (Typ: 7.3) | mΩ | VGS=10V, ID=20A |
| Gate Threshold Voltage (VGS(th)) | 2 to 4 | V | VGS=VDS, ID=250uA |
| Drain-Source Leakage Current (IDSS) | 1 | µA | VDS=120V, VGS=0V |
| Drain-Source Leakage Current (IDSS) (TJ=55°C) | 5 | µA | VDS=120V, VGS=0V |
| Gate-Source Leakage Current (IGSS) | ±100 | nA | VGS=±20V, VDS=0V |
| Gate Resistance (Rg) | 1.9 | Ω | VDS=0V , VGS=0V , f=1MHz |
| Total Gate Charge (Qg) (10V) | 100 | nC | VDS=75V, VGS=10V ID=20A |
| Gate-Source Charge (Qgs) | 24.9 | - | |
| Gate-Drain Charge (Qgd) | 30.8 | - | |
| Turn-on Delay Time (Td(ON)) | 32 | nS | VDS=30V, VGS=10V, RG=3.3Ω, ID=1A |
| Turn-on Rise Time (Tr) | 25 | - | |
| Turn-off Delay Time (Td(OFF)) | 97 | - | |
| Turn-off Fall Time (Tf) | 89 | - | |
| Input Capacitance (Ciss) | 5870 | pF | VDS=75V, VGS=0V, F=1MHz |
| Output Capacitance (Coss) | 404 | - | |
| Reverse Transfer Capacitance (Crss) | 9.3 | - | |
| Continuous Source Current (IS) | 100 | A | VG=VD=0V,Force Current |
| Diode Forward Voltage (VSD) | 1.2 | V | VGS=0V, IS=1A |
2410121535_Megain-MGH073N15N_C22396273.pdf
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