650V 75A IGBT Luxin-semi YGW75N65F1 with Low Saturation Voltage and Positive Temperature Coefficient
Key Attributes
Model Number:
YGW75N65F1
Product Custom Attributes
Td(off):
660ns
Pd - Power Dissipation:
500W
Td(on):
110ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
100pF
Input Capacitance(Cies):
4.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.6V@250uA
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
200pF
Reverse Recovery Time(trr):
75ns
Switching Energy(Eoff):
8.4mJ
Turn-On Energy (Eon):
4.3mJ
Mfr. Part #:
YGW75N65F1
Package:
TO-247
Product Description
Product Overview
The YGW75N65F1 is a 650V / 75A Trench Field Stop IGBT designed for high-speed switching applications. It offers improved reliability with a high breakdown voltage, enhanced ruggedness, and temperature stability. Key features include a short circuit withstand time of 5s, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. This IGBT is suitable for demanding applications such as Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters operating at high switching frequencies.
Product Attributes
- Brand: LU-Semi
- Product Code: YGW75N65F1
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |||
| DC collector current, limited by Tjmax | IC | TC = 25C | 150 | A | ||
| DC collector current, limited by Tjmax | IC | TC = 100C | 75 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 25C | 150 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 100C | 75 | A | ||
| Continuous Gate-emitter voltage | VGE | ±20 | V | |||
| Transient Gate-emitter voltage | VGE | ±30 | V | |||
| Pulse collector current, VGE =15V, tp limited by Tjmax | ICM | 300 | A | |||
| Short Circuit Withstand Time, VGE= 15V, VCE≤ 400V | TSC | 5 | μs | |||
| Power dissipation , Tj=25°C | Ptot | 500 | W | |||
| Operating junction temperature | Tj | -40 | 175 | °C | ||
| Storage temperature | TS | -55 | 175 | °C | ||
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | 260 | °C | ||||
| Mounting torque, M3 screw | Maximum of mounting processes: 3 M | 0.6 | Nm | |||
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | Rθ(j-c) | 0.3 | K/W | |||
| Diode thermal resistance, junction - case | Rθ(j-c) | 0.8 | K/W | |||
| Thermal resistance, junction - ambient | Rθ(j-a) | 40 | K/W | |||
| Electrical Characteristics | ||||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250μA | 650 | V | ||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=1mA | 650 | V | ||
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250μA | 4.6 | 5.6 | 6.2 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A, Tj = 25°C | 1.7 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A, Tj = 175°C | 2.52 | V | ||
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 25°C | 0.1 | μA | ||
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 175°C | 40 | μA | ||
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = ±20V | 100 | nA | ||
| Transconductance | gfs | VCE = 20V, IC = 75A | 40 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 4500 | pF | ||
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 200 | pF | ||
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 100 | pF | ||
| Gate charge | QG | VCC = 480V, IC = 75A, VGE = 15V | 260 | nC | ||
| Short circuit collector current | ICSC | VGE=15V,tSC≤5us, VCC=400V, Tjstart=25°C | 350 | A | ||
| Switching Characteristic, Inductive Load | ||||||
| Turn-on Delay Time | td(on) | Tj=25°C, VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30Ω | 110 | ns | ||
| Rise Time | tr | Tj=25°C, VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30Ω | 40 | ns | ||
| Turn-off Delay Time | td(off) | Tj=25°C, VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30Ω | 660 | ns | ||
| Fall Time | tf | Tj=25°C, VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30Ω | 60 | ns | ||
| Turn-on Energy | Eon | Tj=25°C, VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30Ω | 4.3 | mJ | ||
| Turn-off Energy | Eoff | Tj=25°C, VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30Ω | 8.4 | mJ | ||
| Electrical Characteristics of the DIODE | ||||||
| Diode Forward Voltage | VFM | IF = 75A | 2.3 | V | ||
| Reverse Recovery Time | Trr | IF= 75A, VR = 400V, di/dt= 600A/μs | 75 | ns | ||
| Reverse Recovery Current | Irr | IF= 75A, VR = 400V, di/dt= 600A/μs | 16 | A | ||
| Reverse Recovery Charge | Qrr | IF= 75A, VR = 400V, di/dt= 600A/μs | 664 | nC | ||
2410121314_luxin-semi-YGW75N65F1_C4153745.pdf
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