PNP General Purpose Amplifier MCC MMBT3906HE3 TP with Collector Current 200mA and Voltage Rating 40V

Key Attributes
Model Number: MMBT3906HE3-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3906HE3-TP
Package:
SOT-23
Product Description

Product Overview

The MMBT3906HE3 is a PNP general-purpose amplifier designed for various electronic applications. It features a halogen-free, "Green" device designation, AEC-Q101 qualification, and Moisture Sensitivity Level 1. The epoxy meets UL 94 V-0 flammability rating, and the product is lead-free and RoHS compliant. It is suitable for applications requiring amplification with a collector current of up to -200 mA and a collector-emitter voltage of -40 V.

Product Attributes

  • Brand: MCCSEMI
  • Certifications: AEC-Q101 Qualified, RoHS Compliant
  • Material: Epoxy (UL 94 V-0 Flammability Rating)
  • Color: "Green" Device (Halogen Free)
  • Origin: Not specified

Technical Specifications

ParameterSymbolRatingUnitConditions
Collector CurrentIC-200mA
Power DissipationPD300mW
Collector-Emitter VoltageVCEO-40V
Emitter-Base VoltageVEBO-5V
Collector-Base VoltageVCBO-40V
Operating Junction Temperature Range-55 to +150
Storage Temperature Range-55 to +150
Thermal Resistance Junction to Ambient417/W
Emitter-Base Cutoff CurrentIEBO-100nAVEB=-5V, IC=0
Collector Cutoff CurrentICEX-50nAVCE=-1V, IC=-50mA
Collector Cutoff CurrentICBO-100nAVCB=-40V, IE=0
Emitter-Base Breakdown VoltageV(BR)EBO-5VIC=-10A, IE=0
Collector-Emitter Breakdown VoltageV(BR)CEO-40VIC=-1mA, IB=0
Collector-Base Breakdown VoltageV(BR)CBO-40VIC=-10A, IE=0
DC Current GainhFE1100-300VCE=-1V, IC=-10mA
DC Current GainhFE260VCE=-1V, IC=-50mA
DC Current GainhFE330VCE=-1V, IC=-100mA
Base-Emitter Saturation VoltageVBE(sat)-0.65 to -0.85VVCE=-1V, IC=-10mA, IB=-1mA
Base-Emitter Saturation VoltageVBE(sat)-0.4 to -0.5VVCE=-1V, IC=-50mA, IB=-5mA
Collector-Emitter Saturation VoltageVCE(sat)-0.25VVCE=-1V, IC=-10mA, IB=-1mA
Collector-Emitter Saturation VoltageVCE(sat)-0.4VVCE=-1V, IC=-50mA, IB=-5mA
Delay Timetd35nsVCC=-3V, IC=-10mA, IB1=IB2=-1mA
Rise Timetr35nsVCC=-3V, IC=-10mA, IB1=IB2=-1mA
Storage Timets225nsVCC=-3V, IC=-10mA, VBE=-0.5V, IB1=-1mA
Fall Timetf75nsVCC=-3V, IC=-10mA, VBE=-0.5V, IB1=-1mA
Input CapacitanceCibo10pFVCE=-20V, IC=-10mA, f=100MHz
Output CapacitanceCobo4.5pFVCB=-5V, IE=0, f=1MHz
Transition FrequencyfT250MHzIC=-10mA, IB=-1mA
Noise FigureNF4.0dBVCE=-5V, IC=-100A, RS=1K, f=1.0KHz

2410010231_MCC-MMBT3906HE3-TP_C779220.pdf

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