1200V Silicon Carbide Power MOSFET Megain MGX40N120N for Switch Mode Power Supplies and Motor Drives
Key Attributes
Model Number:
MGX40N120N
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
57A
RDS(on):
35mΩ@18V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Input Capacitance(Ciss):
1.456nF
Output Capacitance(Coss):
96pF
Pd - Power Dissipation:
255W
Gate Charge(Qg):
115nC
Mfr. Part #:
MGX40N120N
Package:
TO-247-4
Product Description
Product Overview
The MGX40N120N is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-performance power electronics applications. It offers a high blocking voltage with low on-resistance, high-speed switching capabilities due to low capacitances, and a fast, robust intrinsic body diode. The optimized package includes a separate driver source pin, making it easy to parallel for increased current handling. This MOSFET is ideal for use in Switch Mode Power Supplies, DC/DC converters, Solar Inverters, Battery Chargers, and Motor Drives.
Product Attributes
- Brand: MegaTron
- Material: Silicon Carbide
Technical Specifications
| Parameter | Test Conditions | Value | Units |
| Product Summary | |||
| VDS | 1200 | V | |
| ID | 57 | A | |
| RDS(ON) (at VGS = 18V) | <46 (Typ: 35) | m | |
| RDS(ON) (at VGS = 15V) | <52 (Typ: 40) | m | |
| Absolute Maximum Ratings | |||
| VDS | VGS = 0 V, ID = 100A | 1200 | V |
| ID (Continuous) | VGS = 18 V, TC = 25 | 57 | A |
| IDM (Pulsed) | 190 | A | |
| PD (Total Power Dissipation) | Tc = 25 | 255 | W |
| VGS (Recommended Gate Source Voltage) | -5/+18 | V | |
| VGS (Maximum Gate Source Voltage) | -10/+25 | V | |
| TSTG (Storage Temperature Range) | -55 to 175 | ||
| TJ (Operating Junction Temperature Range) | -55 to 175 | ||
| TL (Soldering Temperature) | 260 | ||
| Thermal Characteristics | |||
| RJC (Thermal Resistance Junction to Case) | 0.41 | /W | |
| Electrical Characteristics | |||
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0V, ID = 100A | 1200 | V |
| IDSS (Zero Gate Voltage Drain Current) | VDS = 1200V, VGS = 0V | 1 (Typ) | A |
| IGSS (Gate-Source Leakage Current) | VGS = 18V | 1 (Typ) | nA |
| VGS(th) (Gate Threshold Voltage) | VGS = VDS, ID = 10mA | 1.6 - 3.6 | V |
| RDS(ON) (Drain-Source On-state Resistance) | VGS = 18V, ID = 40A | 35 (Typ) | m |
| RDS(ON) (Drain-Source On-state Resistance) | VGS = 15V, ID = 40A | 40 (Typ) | m |
| Ciss (Input Capacitance) | VGS = 0V, VDS = 800V, f = 1MHz, VAC = 25mV | 1456 (Typ) | pF |
| Coss (Output Capacitance) | 96 (Typ) | pF | |
| Crss (Reverse Transfer Capacitance) | 9 (Typ) | pF | |
| Eoss (Stored Energy) | 36 (Typ) | J | |
| Qg (Total Gate Charge) | VDS = 800V, VGS = -5/+18V ID = 40A | 115 (Typ) | nC |
| Qgs (Gate-Source Charge) | 15 (Typ) | nC | |
| Qgd (Gate-Drain Charge) | 57 (Typ) | nC | |
| RG(int) (Internal Gate Resistance) | f = 1MHz, VAC = 25mV | 1.8 (Typ) | |
| td(ON) (Turn-on Delay Time) | VDS = 800V, VGS = -5/+18V RG = 2.5, ID = 40A | 13 (Typ) | nS |
| tr (Turn-on Rise Time) | 19 (Typ) | nS | |
| td(OFF) (Turn-off Delay Time) | 39 (Typ) | nS | |
| tf (Turn-off Fall Time) | 7 (Typ) | nS | |
| EON (Turn-on Switching Energy) | VDS = 800V, VGS = -5/+18V RG = 2.5, ID = 40A | 222 (Typ) | J |
| EOFF (Turn-off Switching Energy) | 126 (Typ) | J | |
| Body Diode Characteristics | |||
| IS (Continuous Source Current) | 57 | A | |
| VSD (Diode Forward Voltage) | VGS = 0V, IS = 20A | 3.8 (Typ) | V |
| trr (Reverse Recovery Time) | IS = 20A, VDS = 800V VGS = -5V di/dt = 2000A/s | 22 (Typ) | nS |
| Qrr (Reverse Recovery Charge) | 335 (Typ) | nC | |
| Irrm (Peak Reverse Recovery Current) | 25 (Typ) | A | |
2412271612_Megain-MGX40N120N_C42422400.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
