Power Field Effect Transistor P Channel Type MATSUKI ME4411 G for Compact Surface Mount Applications
Key Attributes
Model Number:
ME4411-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
381pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.79nF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
-
Mfr. Part #:
ME4411-G
Package:
SOP-8
Product Description
Product Overview
The ME4411-G is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design significantly minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Line: ME4411/ME4411-G
- Certifications: Pb-free (ME4411), Green product-Halogen free (ME4411-G)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Maximum Ratings | VDS | Drain-Source Voltage | -30 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TA=25) | -12.5 | A | |||
| ID | Continuous Drain Current (TA=70) | -10 | A | |||
| IDM | Pulsed Drain Current | -50 | A | |||
| IAR | Avalanche Current | -42 | A | |||
| EAS | Avalanche Energy with Single Pulse (L=0.1mH) | 88.2 | mJ | |||
| Maximum Power Dissipation | PD | (TA=25) | 2.5 | W | ||
| PD | (TA=70) | 1.6 | W | |||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient | RJA | (Device mounted on 1in2 FR4 board with 2 oz copper) | 50 | /W | ||
| Electrical Characteristics | V(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250A) | -30 | V | ||
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=-250A) | -1 | -3 | V | ||
| IGSS | Gate Leakage Current (VDS=0V, VGS=±20V) | ±100 | nA | |||
| IDSS | Zero Gate Voltage Drain Current (VDS=-30V, VGS=0V) | -1 | μA | |||
| RDS(ON) | Drain-Source On-State Resistance (VGS=-10V, ID=-13A) | 8.3 | 10 | mΩ | ||
| RDS(ON) | Drain-Source On-State Resistance (VGS=-4.5V, ID=-10A) | 10 | 13 | mΩ | ||
| VSD | Diode Forward Voltage (IS=-2.7A, VGS=0V) | -0.74 | 1.2 | V | ||
| Rg | Gate Resistance (VGS=0V, VDS=0V, f=1MHZ) | 5.6 | Ω | |||
| Dynamic Characteristics | Qg | Total Gate Charge (VDS=-15V, VGS=-10V, ID=-13A) | 83.2 | nC | ||
| Qg | Total Gate Charge (VDS=-15V, VGS=-4.5V, ID=-13A) | 41 | nC | |||
| Qgs | Gate-Source Charge | 12 | ||||
| Qgd | Gate-Drain Charge | 17.7 | ||||
| Ciss | Input Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 3790 | pF | |||
| Switching Characteristics | td(on) | Turn-On Delay Time (VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω) | 48 | ns | ||
| tr | Turn-On Rise Time | 20.9 | ns | |||
| td(off) | Turn-Off Delay Time | 274 | ns | |||
| tf | Turn-Off Fall Time | 80.2 | ns |
2410121632_MATSUKI-ME4411-G_C709760.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
