Power Switching N Channel MOSFET ME75N03 with Low Inline Power Loss and High Cell Density Technology
Key Attributes
Model Number:
ME75N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
71A
RDS(on):
5.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
128pF
Number:
1 N-channel
Output Capacitance(Coss):
393pF
Input Capacitance(Ciss):
2.58nF
Pd - Power Dissipation:
284W
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
ME75N03
Package:
TO-252
Product Description
Product Overview
The ME75N03 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Name: ME75N03/ME75N03-G
- Certification: Pb-free (ME75N03), Green product-Halogen free (ME75N03-G)
- Package Type: TO-252-3L
Technical Specifications
| Parameter | Symbol | Maximum Ratings (TC=25 Unless Otherwise Noted) | Unit | Limit | Min | Typ | Max | Unit | |
| Maximum Ratings | Drain-Source Voltage | VDS | 30 | V | |||||
| Gate-Source Voltage | VGS | 20 | V | ||||||
| Continuous Drain Current | ID | TC=25 | 71 | A | |||||
| TC=70 | 57 | A | |||||||
| Pulsed Drain Current | IDM | 284 | A | ||||||
| Maximum Power Dissipation | PD | TC=25 | 42 | W | |||||
| TC=70 | 27 | W | |||||||
| Operating Junction Temperature | TJ | -55 to 150 | |||||||
| Thermal Resistance-Junction to Case | RJC | * | 3 | /W | |||||
| Electrical Characteristics | Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | V | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 3 | V | ||||
| Gate-Body Leakage | IGSS | VGS=20V | 100 | nA | |||||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | |||||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 4.3 | 5.2 | m | ||||
| VGS=4.5V, ID=20A | 6 | 8 | m | ||||||
| Diode Forward Voltage | VSD | * ISD=25A, VGS=0V | 0.8 | 1.2 | V | ||||
| Notes: a, pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing. b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. | |||||||||
| Dynamic Characteristics | Total Gate Charge | Qg | VDD=15V, VGS=10V, ID=20A | 56 | nC | ||||
| VDD=15V, VGS=4.5V, ID=20A | 28 | nC | |||||||
| Gate-Source Charge | Qgs | 9 | nC | ||||||
| Gate-Drain Charge | Qgd | 13 | nC | ||||||
| Gate Resistance | Rg | VDS=0V, VGS=0V, f=1MHz | 1.7 | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 2580 | pF | |||||
| Output Capacitance | Coss | 393 | pF | ||||||
| Reverse Transfer Capacitance | Crss | 128 | pF | ||||||
| Turn-On Delay Time | td(on) | VDD=15V, RL =15 ID=1A, VGEN=10V RG=3 | 23 | ns | |||||
| Turn-On Rise Time | tr | 17 | ns | ||||||
| Turn-Off Delay Time | td(off) | 76 | ns | ||||||
| Turn-Off Fall Time | tf | 12 | ns | ||||||
Applications
- Power Management in Notebooks
- DC/DC Converters
- Load Switches
- LCD Display Inverters
2410121449_MATSUKI-ME75N03_C3647156.pdf
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