High current Megain MGC017N06L N channel MOSFET suitable for synchronous rectifier and power management
Key Attributes
Model Number:
MGC017N06L
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100A
RDS(on):
2.1mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
86pF
Number:
1 N-channel
Output Capacitance(Coss):
1.847nF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
5.471nF
Gate Charge(Qg):
102nC@10V
Mfr. Part #:
MGC017N06L
Package:
PDFN5x6-8
Product Description
Product Overview
The MGC017N06L is an N-channel MOSFET featuring Advanced Trench MOS Technology, designed for high-performance applications. It offers low gate charge and low RDS(ON), ensuring efficient operation. This device is 100% EAS guaranteed and available in a Green Device option. It is suitable for motor control, DC/DC converters, and synchronous rectifier applications.
Product Attributes
- Brand: Megain
- Model: MGC017N06L
- Package: PDFN 5x6
- Form: Tape & Reel
- Quantity: 5000 / Tape & Reel
- Marking: MGC017N06L
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 60 | V | |||
| VGS (Gate-Source Voltage) | 20 | V | |||
| ID (Drain Current - Continuous, TC=25) | 100 | A | |||
| ID (Drain Current - Continuous, TC=100) | 66 | A | |||
| IDM (Pulsed Drain Current) | 400 | A | |||
| EAS (Single Pulse Avalanche Energy) | 306 | mJ | |||
| IAS (Avalanche Current) | 35 | A | |||
| PD (Total Power Dissipation, TC=25C) | 83 | W | |||
| TSTG (Storage Temperature Range) | -55 | 150 | |||
| TJ (Operating Junction Temperature Range) | -55 | 150 | |||
| RJA (Thermal Resistance Junction to Ambient) | 55 | /W | |||
| RJC (Thermal Resistance Junction to Case) | 1.1 | /W | |||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V, ID=250uA | 60 | V | ||
| RDS(ON) (Drain-Source On-state Resistance) | VGS=10V, ID=20A | 1.7 | 2.1 | m | |
| RDS(ON) (Drain-Source On-state Resistance) | VGS=4.5V, ID=20A | 2.3 | 3.2 | m | |
| VGS(th) (Gate Threshold Voltage) | VGS=VDS, ID=250uA | 1.2 | 2.3 | V | |
| IDSS (Drain-Source Leakage Current) | VDS=52V, VGS=0V | 1 | uA | ||
| IDSS (Drain-Source Leakage Current) | VDS=52V, VGS=0V, TJ=55 | 5 | uA | ||
| IGSS (Gate-Source Leakage Current) | VGS=20V, VDS=0V | 100 | nA | ||
| gfs (Forward Transconductance) | VDS=5V, ID=20A | 60 | S | ||
| Rg (Gate Resistance) | VDS=0V , VGS=0V , f=1MHz | 1.6 | |||
| Qg (Total Gate Charge) | VDS=30V, VGS=10V, ID=20A | 102 | nC | ||
| Qg (Total Gate Charge) | VDS=30V, VGS=4.5V, ID=20A | 54.1 | nC | ||
| Qgs (Gate-Source Charge) | VDS=30V, VGS=10V, ID=20A | 15.7 | nC | ||
| Qgd (Gate-Drain Charge) | VDS=30V, VGS=10V, ID=20A | 27.9 | nC | ||
| Td(ON) (Turn-on Delay Time) | VDS=30V, VGS=10V, RG=3, ID=20A | 15 | nS | ||
| Tr (Turn-on Rise Time) | VDS=30V, VGS=10V, RG=3, ID=20A | 12 | nS | ||
| Td(OFF) (Turn-off Delay Time) | VDS=30V, VGS=10V, RG=3, ID=20A | 60 | nS | ||
| Tf (Turn-off Fall Time) | VDS=30V, VGS=10V, RG=3, ID=20A | 19 | nS | ||
| Ciss (Input Capacitance) | VDS=30V, VGS=0V, F=1MHz | 5471 | pF | ||
| Coss (Output Capacitance) | VDS=30V, VGS=0V, F=1MHz | 1847 | pF | ||
| Crss (Reverse Transfer Capacitance) | VDS=30V, VGS=0V, F=1MHz | 86 | pF | ||
| IS (Continuous Source Current) | VG=VD=0V,Force Current | 100 | A | ||
| VSD (Diode Forward Voltage) | VGS=0V, IS=1A | 1.2 | V | ||
| trr (Reverse Recovery Time) | IF=20A, dlF/dt=100A/us | 50 | nS | ||
| Qrr (Reverse Recovery Charge) | IF=20A, dlF/dt=100A/us | 72 | nC |
2411220027_Megain-MGC017N06L_C41380431.pdf
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