High Cell Density Trench Technology in Megain MGD60P06L P channel MOSFET with 60 Volt Voltage Rating
Key Attributes
Model Number:
MGD60P06L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
18A
RDS(on):
60mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Input Capacitance(Ciss):
1.447nF
Pd - Power Dissipation:
34.7W
Output Capacitance(Coss):
97.3pF
Gate Charge(Qg):
9.86nC@4.5V
Mfr. Part #:
MGD60P06L
Package:
TO-252
Product Description
Product Overview
The MGD60P06L is a P-channel MOSFET designed for various power management applications. It features a voltage rating of -60V and a low on-state resistance of typically 60m at VGS=10V. Key advantages include super low gate charge, 100% EAS guaranteed, excellent CdV/dt effect decline, and advanced high cell density Trench technology. This device is suitable for load switching, PWM applications, and general power management tasks.
Product Attributes
- Brand: MEGAAI
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-Source Voltage | VDS | -60 | - | - | V | |
| Gate-Source Voltage | VGS | - | - | ±20 | V | |
| Continuous Drain Current (TC=25) | ID | VGS @ 10V1 | - | - | -18 | A |
| Continuous Drain Current (TC=100) | ID | VGS @ 10V1 | - | - | -11 | A |
| Drain Current Continuous (TA=25) | ID | VGS @ 10V1 | - | - | -4.3 | A |
| Drain Current Continuous (TA=70) | ID | VGS @ 10V1 | - | - | -3.5 | A |
| Pulsed Drain Current | IDM | 2 | - | - | -36 | A |
| Single Pulse Avalanche Energy | EAS | 3 | - | 35.4 | - | mJ |
| Avalanche Current | IAS | - | -26.6 | - | A | |
| Total Power Dissipation (TC=25C) | PD | 4 | - | 34.7 | - | W |
| Total Power Dissipation (TA=25C) | PD | 4 | - | 2 | - | W |
| Storage Temperature Range | TSTG | -55 | - | 150 | ||
| Operating Junction Temperature Range | TJ | -55 | - | 150 | ||
| Thermal Resistance Junction-Ambient | RJA | 1 | - | - | 62 | /W |
| Thermal Resistance Junction-Case | RJC | 1 | - | - | 3.6 | /W |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | -60 | - | - | V |
| BVDSS Temperature Coefficient | BVDSS/TJ | Reference to 25, ID=1mA | - | 0.03 | - | V/ |
| Drain-Source On-state Resistance | RDS(ON) | VGS=-10V, ID=-12A2 | - | 60 | 70 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=-4.5V, ID=-8A2 | - | 84 | 105 | m |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | -1.2 | - | -2.5 | V |
| VGS(th) Temperature Coefficient | VGS(th) | - | -4.56 | - | mV/ | |
| Drain-Source Leakage Current | IDSS | VDS=48V, VGS=0V TJ=25 | - | - | 1 | uA |
| Drain-Source Leakage Current | IDSS | VDS=48V, VGS=0V TJ=55 | - | - | 5 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Forward Transconductance | gfs | VDS=-5V, ID=-12A | - | 15.4 | - | S |
| Gate Resistance | Rg | VDS=0V , VGS=0V , f=1MHz | - | 13.5 | - | |
| Total Gate Charge | Qg | VDS=-48V, VGS=-4.5V ID=-10A | - | 9.86 | - | nC |
| Gate-Source Charge | Qgs | - | 3.08 | - | - | |
| Gate-Drain Charge | Qgd | - | 2.95 | - | - | |
| Turn-on Delay Time | Td(ON) | VDD=-15V, VGS=10V, RG=3.3, ID=-1A | - | 28.8 | - | nS |
| Turn-on Rise Time | Tr | - | 19.8 | - | - | |
| Turn-off Delay Time | Td(OFF) | - | 60.8 | - | - | |
| Turn-off Fall Time | Tf | - | 7.2 | - | - | |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, F=1MHz | - | 1447 | - | pF |
| Output Capacitance | Coss | - | 97.3 | - | - | |
| Reverse Transfer Capacitance | Crss | - | 70 | - | - | |
| Continuous Source Current | IS | VG=VD=0V,Force Current1,5 | - | - | -18 | A |
| Pulsed Source Current | ISM | 2,5 | - | - | -36 | A |
| Diode Forward Voltage | VSD | VGS=0V,IS=-1A , TJ=252 | - | - | -1.2 | V |
2506251635_Megain-MGD60P06L_C49242750.pdf
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