MATSUKI ME2306D G power MOSFET featuring Pb free and halogen free certifications with SOT 23 package
Key Attributes
Model Number:
ME2306D-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
370pF@15V
Pd - Power Dissipation:
1.39W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
ME2306D-G
Package:
SOT-23
Product Description
Product Overview
The ME2306D is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like cellular phone and notebook computer power management, and other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection and a super high-density cell design for extremely low RDS(ON) and exceptional DC current capability.
Product Attributes
- Brand: ME (Matsuki Electric/Force mos)
- Product Type: N-Channel 30V (D-S) MOSFET, ESD Protected
- Certifications: Pb-free (ME2306D), Green product-Halogen free (ME2306D-G)
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGSs | 20 | V | |||
| Continuous Drain Current | ID | TA=25 | 5.3 | A | ||
| Continuous Drain Current | ID | TA=70 | 4.2 | A | ||
| Pulsed Drain Current | IDM | 21.2 | A | |||
| Maximum Power Dissipation | PD | TA=25 | 1.39 | W | ||
| Maximum Power Dissipation | PD | TA=70 | 0.89 | W | ||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient | RJA | * | 90 | /W | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.5 | 3 | V |
| Gate Leakage Current | IGSS | VDS=0V, VGS=16V | 10 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID= 6.7A | 26 | 31 | m | |
| Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID= 5.0A | 40 | 52 | m | |
| Diode Forward Voltage | VSD | IS=1.7A, VGS=0V | 0.8 | 1.2 | V | |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHZ | 370 | pF | ||
| Output Capacitance | COSS | VDS=15V, VGS=0V, f=1MHZ | 68 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1MHZ | 21 | pF | ||
| Gate Resistance | Rg | f=1MHz | 1.9 | |||
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=6.7A | 12 | nC | ||
| Gate-Source Charge | Qgs | VDS=15V, VGS=4.5V, ID=6.7A | 5.7 | nC | ||
| Gate-Drain Charge | Qgd | VDS=15V, VGS=4.5V, ID=6.7A | 3.0 | nC | ||
| Turn-On Delay Time | td(on) | VDD=15V, RL =15 ID=1.0A, VGEN=10V RG=6 | 9.2 | ns | ||
| Turn-On Rise Time | tr | VDD=15V, RL =15 ID=1.0A, VGEN=10V RG=6 | 13 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=15V, RL =15 ID=1.0A, VGEN=10V RG=6 | 33 | ns | ||
| Turn-Off Fall Time | tf | VDD=15V, RL =15 ID=1.0A, VGEN=10V RG=6 | 3.7 | ns |
2410121631_MATSUKI-ME2306D-G_C2841349.pdf
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