Trench MOSFET MagnaChip Semicon MDU1721VRH Single N Channel Device with RoHS and Halogen Free Status
Key Attributes
Model Number:
MDU1721VRH
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
204.1A
RDS(on):
1.1mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.85nF
Number:
1 N-channel
Input Capacitance(Ciss):
7.45nF
Pd - Power Dissipation:
96.2W
Output Capacitance(Coss):
200pF
Gate Charge(Qg):
113.8nC@10V
Mfr. Part #:
MDU1721VRH
Package:
PDFN56
Product Description
Product Overview
The MDU1721VRH is a Single N-Channel Trench MOSFET from Magnachip Semiconductor Ltd., utilizing advanced MOSFET technology to deliver high performance in on-state resistance, fast switching, and excellent quality. It is ideally suited for synchronous rectification in server and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Name: MDU1721VRH
- Technology: Trench MOSFET
- Package: PDFN56
- Certifications: Halogen Free
- RoHS Status: Halogen Free
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25 (Silicon Limited) | 204.1 | A | ||
| TC=25 (Package Limited) | 100.0 | A | ||||
| TC=100 (Silicon Limited) | 129.1 | A | ||||
| TA=25(3) | 32.9(3) | A | ||||
| Pulsed Drain Current | IDM | 400.0 | A | |||
| Power Dissipation | PD | TC=25 | 96.2 | W | ||
| TC=100 | 38.5 | W | ||||
| TA=25(3) | 2.5(3) | W | ||||
| Single Pulse Avalanche Energy | EAS | (2) | 450 | mJ | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | ~ | 150 | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RθJA | (1) | 50 | /W | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.3 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250μA, VGS = 0V | 40 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250μA | 1.0 | - | 3.0 | V |
| Drain Cut-Off Current | IDSS | VDS = 32V, VGS = 0V | - | - | 1.0 | μA |
| Gate Leakage Current | IGSS | VGS = ±20V, VDS = 0V | - | - | ±0.1 | μA |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID =50A | - | 1.1 | 1.4 | mΩ |
| VGS = 10V, ID = 100A | <1.4 | mΩ | ||||
| Forward Transconductance | gfs | VDS = 10V, ID =50A | - | 120 | - | S |
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg(10.0V) | VDS = 20.0V, ID = 50.0A, VGS = 10V | - | 113.8 | - | nC |
| Gate-Source Charge | Qgs | - | 23.3 | - | ||
| Gate-Drain Charge | Qgd | - | 18.6 | - | ||
| Input Capacitance | Ciss | VDS = 20.0V, VGS = 0V, f = 1.0MHz | - | 7,450 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 200 | - | ||
| Output Capacitance | Coss | - | 1,850 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 20.0V, ID = 50A , RG = 3.0Ω | - | 24.0 | - | ns |
| Rise Time | tr | - | 16.1 | - | ||
| Turn-Off Delay Time | td(off) | - | 92.3 | - | ||
| Fall Time | tf | - | 30.0 | - | ||
| Gate Resistance | Rg | f= 1 MHz | 1.30 | Ω | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 50A, VGS = 0V | - | 0.80 | 1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF =50A, dl/dt = 100A/μs | - | 61.0 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | - | 92.0 | - | nC | |
2509121533_MagnaChip-Semicon-MDU1721VRH_C51891808.pdf
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