P Channel MOSFET semiconductor device MATSUKI MESS84-G in SOT 23 package for electronic applications

Key Attributes
Model Number: MESS84-G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
5Ω@5V,100mA
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
5pF@5V
Number:
1 P-Channel
Input Capacitance(Ciss):
30pF@5V
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
-
Mfr. Part #:
MESS84-G
Package:
SOT-23
Product Description

Product Overview

P-Channel MOSFET MESS84 is a semiconductor device designed for various electronic applications. It is housed in a SOT-23 package.

Product Attributes

  • Package: SOT-23
  • Marking Code: MONTH CODE

Technical Specifications

Device NamePackageMonth CodeYearMarking Code
MESS84SOT-23E2007, 2009M
MESS84SOT-23F2007, 2009M
MESS84SOT-23H2007, 2009M
MESS84SOT-23J2007, 2009M
MESS84SOT-23K2007, 2009M
MESS84SOT-23L2007, 2009M
MESS84SOT-23N2007, 2009M
MESS84SOT-23P2007, 2009M
MESS84SOT-23U2007, 2009M
MESS84SOT-23X2007, 2009M
MESS84SOT-23Y2007, 2009M
MESS84SOT-23Z2007, 2009M
MESS84SOT-2312006, 2008M
MESS84SOT-2322006, 2008M
MESS84SOT-2332006, 2008M
MESS84SOT-2342006, 2008M
MESS84SOT-2352006, 2008M
MESS84SOT-2362006, 2008M
MESS84SOT-2372006, 2008M
MESS84SOT-2382006, 2008M
MESS84SOT-2392006, 2008M
MESS84SOT-23T2006, 2008M
MESS84SOT-23V2006, 2008M
MESS84SOT-23C2006, 2008M
DimensionMin (mm)Max (mm)
A2.703.1
B1.201.6
C0.91.3
D0.350.50
G1.702.10
H0.0130.15
J0.0850.2
K0.450.7
L0.891.02
S2.202.80
V0.450.60

2410121228_MATSUKI-MESS84-G_C709767.pdf

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