power MOSFET MagnaChip Semicon MDY10N025RH designed for operation in motor inverters and battery systems
Key Attributes
Model Number:
MDY10N025RH
Product Custom Attributes
Mfr. Part #:
MDY10N025RH
Package:
M2PAK-7P
Product Description
Product Overview
The Magnachip Power Technology MDY10N025RH is a single N-channel Trench MOSFET designed for high-power applications. It leverages advanced Magnachip's MV MOSFET Technologies to deliver high performance in on-state resistance, fast switching, and parallel performance. The MDY10N025RH is an ideal solution for applications demanding excellent thermal behavior, such as motor inverters, battery management, and power inverters. Its unique driver source pin design helps prevent gate ringing and false triggering, mitigating the need for switching loss management due to stray inductance in standard packages.
Product Attributes
- Brand: Magnachip Power Technology
- Model: MDY10N025RH
- Package: M2PAK-7P
- Certifications: Halogen Free, RoHS Status
- Website: http://www.magnachip.com/powersolutions
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions / Note |
| Static Characteristics | ||||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0 V, ID=250 A |
| Gate-source leakage current | IGSS | ±100 | nA | VGS=±20 V, VDS=0 V |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=100 V, VGS=0 V |
| Gate threshold voltage | VGS(th) | 2.0 2.8 4.0 | V | VDS=VGS, ID=250 µA |
| Drain-source on-state resistance | RDS(on) | 2.2 2.5 | mΩ | VGS=10 V, ID=100 A |
| Transconductance | gfs | 240 | A | Tc=25°C |
| Maximum Ratings | ||||
| Drain-source Voltage | VDS | 100 | V | TJ = 25°C, unless otherwise specified |
| Gate-source Voltage | VGS | ±20 | V | TJ = 25°C, unless otherwise specified |
| Drain current | ID | 240 | A | Tc=25°C |
| Pulsed drain current | IDM | 960 | A | Pulse width limited by Tjmax |
| Total power dissipation | Ptot | 469 | W | Tc=25°C |
| Avalanche energy, single pulse | EAS | 613 | mJ | Starting Tj = 25°C, L = 1.0mH, IAS = 35A, VDD = 50V, VGS = 10V |
| Operating and storage temperature | Tj, Tstg | -55 ~ 175 | °C | - |
| Thermal Characteristics | ||||
| Thermal resistance, junction - case | RθJC | 0.32 | °C/W | - |
| Thermal resistance, junction - ambient | RθJA | 234 | °C/W | Surface mounted FR-4 board by JEDEC (jesd51-7) |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | 12508 | pF | VGS=0 V, VDS=50 V, f=1 MHz |
| Output capacitance | Coss | 1457 | pF | VGS=0 V, VDS=50 V, f=1 MHz |
| Reverse transfer capacitance | Crss | 14 | pF | VGS=0 V, VDS=50 V, f=1 MHz |
| Gate charge total | Qg | 167 | nC | VDD=50 V, ID=100 A, VGS=10 V |
| Gate to source charge | Qgs | 45 | nC | VDD=50 V, ID=100 A, VGS=10 V |
| Gate to drain charge | Qgd | 120 | nC | VDD=50 V, ID=100 A, VGS=10 V |
| Gate plateau voltage | Vplateau | 4.3 | V | VDD=50 V, ID=100 A, VGS=10 V |
| Turn-on delay time | td(on) | 33 | ns | VDD=50 V, ID=100 A, VGS=10 V, RG,ext=3Ω |
| Rise time | tr | 21 | ns | VDD=50 V, ID=100 A, VGS=10 V, RG,ext=3Ω |
| Turn-off delay time | td(off) | 137 | ns | VDD=50 V, ID=100 A, VGS=10 V, RG,ext=3Ω |
| Fall time | tf | 43 | ns | VDD=50 V, ID=100 A, VGS=10 V, RG,ext=3Ω |
| Diode Characteristics | ||||
| Diode continuous forward current | IS | 240 | A | - |
| Diode pulse current | IS,pulse | 960 | A | pulsed; tp ≤ 10 µs |
| Diode forward voltage | VSD | 0.9 1.2 | V | VGS=0 V, IF=100 A |
| Reverse recovery time | trr | 117 | ns | IF=100 A, diF/dt=100 A/µs |
| Reverse recovery charge | Qrr | 408 | nC | IF=100 A, diF/dt=100 A/µs |
2509121533_MagnaChip-Semicon-MDY10N025RH_C51891815.pdf
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