Power Management Dual P Channel MOSFET MATSUKI ME4953 with Low Voltage Operation and DMOS Technology
Key Attributes
Model Number:
ME4953
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
50mΩ@10V,5.3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
20pF@15V
Number:
2 P-Channel
Input Capacitance(Ciss):
490pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
ME4953
Package:
SOP-8
Product Description
Product Overview
The ME4953 is a Dual P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers. It offers low in-line power loss within a very small outline surface mount package.
Product Attributes
- Brand: ME
- Product Series: ME4953/ME4953-G
- Certifications: Pb-free (ME4953), Green product-Halogen free (ME4953-G)
- Package Type: SOP-8
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | VDSS | -30 | V | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current (Tj=150) | ID | -5.3 | A | TA=25 |
| Continuous Drain Current (Tj=150) | ID | -4.3 | A | TA=70 |
| Pulsed Drain Current | IDM | -30 | A | T10 sec |
| Continuous Source Current (Diode Conduction) | IS | -1.7 | A | |
| Maximum Power Dissipation | PD | 2.0 | W | TA=25 |
| Maximum Power Dissipation | PD | 1.3 | W | TA=70 |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Storage Temperature Range | Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient* | RJA | 47 | /W | Steady State |
| Thermal Resistance-Junction to Ambient* | RJA | 75 | /W | |
| Thermal Resistance-Junction to Case | RJC | 45 | /W | |
| Gate Threshold Voltage | VGS(th) | -1.4 | V | VDS=VGS, ID=-250A (Typ) |
| Gate Leakage Current | IGSS | 100 | nA | VDS=0V, VGS=20V |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-30V, VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | -25 | A | VDS=-30V, VGS=0V, TJ=55 |
| Drain-Source On-Resistance | RDS(ON) | 60 | m | VGS=-10V, ID=-5.3A (Max) |
| Drain-Source On-Resistance | RDS(ON) | 90 | m | VGS=-4.5V, ID=-4.2A (Max) |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-1.7A, VGS=0V (Max) |
| Gate resistance | Rg | 3.5 | VDS=0V, VGS=0V, f=1MHz (Typ) | |
| Input capacitance | Ciss | 490 | pF | VDS=-15V, VGS=0V, f=1.0MHz (Typ) |
| Output Capacitance | Coss | 70 | pF | VDS=-15V, VGS=0V, f=1.0MHz (Typ) |
| Reverse Transfer Capacitance | Crss | 20 | pF | VDS=-15V, VGS=0V, f=1.0MHz (Typ) |
| Total Gate Charge | Qg | 17 | nC | VDS=-15V, VGS=-10V, ID=-5.3A (Typ) |
| Gate-Source Charge | Qgs | 4 | nC | VDS=-15V, VGS=-10V, ID=-5.3A (Typ) |
| Gate-Drain Charge | Qgd | 3 | nC | VDS=-15V, VGS=-10V, ID=-5.3A (Typ) |
| Turn-On Delay Time | td(on) | 33 | ns | VDD=-15V, RL =15, ID=-1.0A, VGEN=-10V, RG=6 (Typ) |
| Turn-On Rise Time | tr | 15 | ns | VDD=-15V, RL =15, ID=-1.0A, VGEN=-10V, RG=6 (Typ) |
| Turn-Off Delay Time | td(off) | 52 | ns | VDD=-15V, RL =15, ID=-1.0A, VGEN=-10V, RG=6 (Typ) |
| Turn-Off Fall Time | tf | 6 | ns | VDD=-15V, RL =15, ID=-1.0A, VGEN=-10V, RG=6 (Typ) |
2410121449_MATSUKI-ME4953_C709761.pdf
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