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quality Super junction MOSFET MagnaChip Semicon MMD80R900QZRH providing reduced switching losses and low EMI factory
quality Super junction MOSFET MagnaChip Semicon MMD80R900QZRH providing reduced switching losses and low EMI factory
quality Super junction MOSFET MagnaChip Semicon MMD80R900QZRH providing reduced switching losses and low EMI factory
quality Super junction MOSFET MagnaChip Semicon MMD80R900QZRH providing reduced switching losses and low EMI factory

Super junction MOSFET MagnaChip Semicon MMD80R900QZRH providing reduced switching losses and low EMI

Key Attributes
Model Number: MMD80R900QZRH
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
6A
RDS(on):
780mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.8pF
Input Capacitance(Ciss):
506pF
Pd - Power Dissipation:
62.5W
Output Capacitance(Coss):
21pF
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
MMD80R900QZRH
Package:
TO-252(DPAK)
Product Description

Product Overview

The MMD80R900QZ is a power MOSFET utilizing Magnachip's advanced super junction technology, designed to achieve very low on-resistance and gate charge. This MOSFET offers significantly higher efficiency through optimized charge coupling technology, providing designers with the advantage of low EMI and reduced switching losses. It is suitable for various switching applications, including PFC power supply stages and adapters.

Product Attributes

  • Brand: Magnachip Semiconductor Ltd.
  • Material: Advanced Super Junction Technology
  • Certifications: RoHS Compliant, Green Package (Pb Free Plating, Halogen Free)

Technical Specifications

ParameterSymbolValueUnitTest ConditionNote
Drain Source voltageVDSS800V
Gate Source voltageVGSS±20V
Continuous drain currentID6ATC=25 °C
Continuous drain currentID3.8ATC=100 °C
Pulsed drain currentIDM18A(1)
Power dissipationPD62.5W
Single - pulse avalanche energyEAS200mJ
MOSFET dv/dt ruggednessdv/dt50V/ns
Diode dv/dt ruggednessdv/dt15V/ns(2)
Storage temperatureTstg-55 ~150°C
Maximum operating junction temperatureTj150°C
Thermal resistance, junction-case maxRthjc2°C/W
Thermal resistance, junction-ambient maxRthja62.5°C/W
Drain Source Breakdown voltageV(BR)DSS800VVGS = 0V, ID = 0.25mA
Gate Threshold VoltageVGS(th)3.5VVDS = VGS, ID = 0.25mATyp.
Zero Gate Voltage Drain CurrentIDSS1µAVDS = 800V, VGS = 0VMax.
Gate Leakage CurrentIGSS10µAVGS = ±20, VDS = 0VMax.
Drain-Source On State ResistanceRDS(ON)0.90ΩVGS = 10V, ID = 3.8AMax.
Drain-Source On State ResistanceRDS(ON)0.78ΩVGS = 10V, ID = 3.8ATyp.
Input CapacitanceCiss506pFVDS = 100V, VGS = 0V, f = 400kHzTyp.
Output CapacitanceCoss21pFVDS = 100V, VGS = 0V, f = 400kHzTyp.
Reverse Transfer CapacitanceCrss0.8pFVDS = 100V, VGS = 0V, f = 400kHzTyp.
Effective Output Capacitance Energy RelatedCo(er)11-VDS = 0V to 640V, VGS = 0V, f = 400kHz(3) Typ.
Turn On Delay Timetd(on)18nsVGS = 10V, RG = 25Ω, VDS = 400V, ID = 6ATyp.
Rise Timetr29nsVGS = 10V, RG = 25Ω, VDS = 400V, ID = 6ATyp.
Turn Off Delay Timetd(off)84nsVGS = 10V, RG = 25Ω, VDS = 400V, ID = 6ATyp.
Fall Timetf19nsVGS = 10V, RG = 25Ω, VDS = 400V, ID = 6ATyp.
Total Gate ChargeQg13nCVGS = 10V, VDS = 640V, ID = 6ATyp.
Gate Source ChargeQgs4.3-VGS = 10V, VDS = 640V, ID = 6ATyp.
Gate Drain Charge Qgd5.3-VGS = 10V, VDS = 640V, ID = 6ATyp.
Gate ResistanceRG29ΩVGS = 0V, f = 1.0MHzTyp.
Continuous Diode Forward CurrentISD6AMax.
Diode Forward VoltageVSD1.4VISD = 6A, VGS = 0VMax.
Reverse Recovery Timetrr375nsISD = 6A di/dt = 100A/μs VDD = 100VTyp.
Reverse Recovery ChargeQrr2.7μCISD = 6A di/dt = 100A/μs VDD = 100VTyp.
Reverse Recovery CurrentIrrm14AISD = 6A di/dt = 100A/μs VDD = 100VTyp.

2509121533_MagnaChip-Semicon-MMD80R900QZRH_C51902203.pdf

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