MagnaChip Semicon MMF65R190PTH 650V Power MOSFET featuring super junction and low gate charge design
Key Attributes
Model Number:
MMF65R190PTH
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
RDS(on):
170mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF
Pd - Power Dissipation:
34W
Output Capacitance(Coss):
1.425nF
Input Capacitance(Ciss):
1.86nF
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
MMF65R190PTH
Package:
TO-220F
Product Description
Product Overview
The MMF65R190P is a 650V N-channel Power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling technology. This device provides designers with the advantage of low EMI and reduced switching loss, making it suitable for various power applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Package: TO-220F
- Certifications: Halogen Free, Pb Free Plating
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain Source voltage | VDSS | 650 | V | |
| Gate Source voltage | VGSS | ±30 | V | |
| Continuous drain current | ID | 20 | A | TC=25℃ |
| Continuous drain current | ID | 12.7 | A | TC=100℃ |
| Pulsed drain current | IDM | 60 | A | (1) |
| Power dissipation | PD | 34 | W | |
| Single - pulse avalanche energy | EAS | 485 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | |
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns | |
| Storage temperature | Tstg | -55 ~150 | ℃ | |
| Maximum operating junction temperature | Tj | 150 | ℃ | |
| Thermal resistance, junction-case max | Rthjc | 3.7 | ℃/W | |
| Thermal resistance, junction-ambient max | Rthja | 62.5 | ℃/W | |
| Drain Source Breakdown voltage | V(BR)DSS | 650 | V | VGS = 0V, ID=0.25mA |
| Gate Threshold Voltage | VGS(th) | 2 - 4 | V | VDS = VGS, ID=0.25mA |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 700V, VGS = 0V |
| Gate Leakage Current | IGSS | 100 | nA | VGS = ±30V, VDS =0V |
| Drain-Source On State Resistance | RDS(ON) | 0.17 - 0.19 | ℉ | VGS = 10V, ID = 7.3 A |
| Input Capacitance | Ciss | 1860 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 1425 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 76 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Effective Output Capacitance Energy Related | Co(er) | 39 | - | VDS = 0V to 560V, VGS = 0V,f = 1.0MHz |
| Turn On Delay Time | td(on) | 40 | ns | VGS = 10V, RG = 25℉, VDS = 350V, ID = 20 A |
| Rise Time | tr | 75 | ns | VGS = 10V, RG = 25℉, VDS = 350V, ID = 20 A |
| Turn Off Delay Time | td(off) | 172 | ns | VGS = 10V, RG = 25℉, VDS = 350V, ID = 20 A |
| Fall Time | tf | 54 | ns | VGS = 10V, RG = 25℉, VDS = 350V, ID = 20 A |
| Total Gate Charge | Qg | 53 | nC | VGS = 10V, VDS =560V, ID = 20 A |
| Gate Source Charge | Qgs | 13 | nC | VGS = 10V, VDS =560V, ID = 20 A |
| Gate Drain Charge | Qg | 20 | nC | VGS = 10V, VDS =560V, ID = 20 A |
| Gate Resistance | RG | 3.0 | ℉ | VGS = 0V, f = 1.0MHz |
| Continuous Diode Forward Current | ISD | 20 | A | |
| Diode Forward Voltage | VSD | 1.4 | V | ISD = 20 A, VGS = 0 V |
| Reverse Recovery Time | trr | 524 | ns | ISD = 20 A, di/dt = 100 A/μs, VDD = 100 V |
| Reverse Recovery Charge | Qrr | 9.4 | μC | ISD = 20 A, di/dt = 100 A/μs, VDD = 100 V |
| Reverse Recovery Current | Irrm | 35.7 | A | ISD = 20 A, di/dt = 100 A/μs, VDD = 100 V |
Applications
- PFC Power Supply Stages
- Switching Applications
- Adapter
- Motor Control
- DC DC Converters
2509121533_MagnaChip-Semicon-MMF65R190PTH_C193394.pdf
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