power MOSFET MagnaChip Semicon MDP1933TH featuring low on state resistance and high current handling
Key Attributes
Model Number:
MDP1933TH
Product Custom Attributes
Mfr. Part #:
MDP1933TH
Package:
TO-220
Product Description
Product Overview
The MDP1933 is a single N-channel Trench MOSFET from Magnachip Semiconductor, utilizing advanced MOSFET technology for high performance. It offers excellent on-state resistance, fast switching capabilities, and superior quality. This device is ideal for synchronous rectification in server applications and general-purpose uses.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Line: MDP1933
- Technology: Trench MOSFET
- Certifications: RoHS Status: Halogen Free
Technical Specifications
| Characteristic | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta = 25oC) | 80 | V | ||
| Gate-Source Voltage | VGSS | (Ta = 25oC) | 20 | V | ||
| Continuous Drain Current | ID | TC=25oC (Silicon Limited) | 105 | A | ||
| TC=25oC (Package Limited) | 120 | A | ||||
| TC=100oC | 67 | A | ||||
| Pulsed Drain Current | IDM | 420 | A | |||
| Power Dissipation | PD | TC=25oC | 157 | W | ||
| TC=100oC | 63 | W | ||||
| Single Pulse Avalanche Energy | EAS | (2) | 144.5 | mJ | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | oC | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | (1) | 62.5 | oC/W | ||
| Thermal Resistance, Junction-to-Case | RJC | 0.8 | oC/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 80 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| Drain Cut-Off Current | IDSS | VDS = 64V, VGS = 0V | - | - | 1.0 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 50A | - | 5.5 | 7.0 | m |
| Forward Transconductance | gfs | VDS = 10V, ID = 50A | - | 47 | - | S |
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 40V, ID = 50A, VGS = 10V | - | 59.4 | - | nC |
| Gate-Source Charge | Qgs | - | 16.5 | - | ||
| Gate-Drain Charge | Qgd | - | 12.3 | - | ||
| Input Capacitance | Ciss | VDS = 40V, VGS = 0V, f = 1.0MHz | - | 3,841 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 34.2 | - | ||
| Output Capacitance | Coss | - | 651.7 | - | ||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 40V, ID = 50A , RG = 3.0 | - | 15.6 | - | ns |
| Rise Time | tr | - | 32.7 | - | ||
| Turn-Off Delay Time | td(off) | - | 24.2 | - | ||
| Fall Time | tf | - | 15.1 | - | ||
| Gate Resistance | Rg | f=1 MHz | - | 2.5 | - | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 50A, VGS = 0V | - | 0.9 | 1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF = 50A, dl/dt = 100A/s | - | 64.3 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | - | 152.7 | - | nC | |
2509121533_MagnaChip-Semicon-MDP1933TH_C25414988.pdf
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