P Channel Trench MOSFET MagnaChip Semicon MDF3752TH featuring low gate charge and robust performance
Key Attributes
Model Number:
MDF3752TH
Product Custom Attributes
Mfr. Part #:
MDF3752TH
Package:
TO-220F
Product Description
MDF3752TH P-Channel Trench MOSFET
The MDF3752TH is a P-Channel Trench MOSFET from Magnachip Semiconductor Ltd., leveraging advanced Trench MOSFET Technology to deliver high performance in on-state resistance and switching characteristics. Its low RDS(ON) and low Gate Charge offer significant benefits in various applications. This MOSFET is designed for inverters and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Part Number: MDF3752TH
- Technology: P-Channel Trench MOSFET
- Certifications: Halogen Free, RoHS Status
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Note 1) | ID | TC=25oC | -36.5 | A | ||
| TC=100oC | -23.1 | A | ||||
| Pulsed Drain Current | IDM | -90 | A | |||
| Power Dissipation | PD | TC=25oC | 35.7 | W | ||
| TC=100oC | 14.3 | |||||
| Single Pulse Avalanche Energy (Note 2) | EAS | 128 | mJ | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | oC | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | oC/W | |||
| Thermal Resistance, Junction-to-Case | RJC | 3.5 | oC/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = -250A, VGS = 0V | -40 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250A | -1.0 | -2.0 | -3.0 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = -32V, VGS = 0V | -1 | A | ||
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | 0.1 | A | |
| Drain-Source ON Resistance | RDS(ON) | VGS = -10V, ID = -20A | 13 | 17 | m | |
| VGS = -4.5V, ID = -10A | 19 | 25 | m | |||
| Gate resistance | RG | F=1MHz | 4.8 | |||
| Forward Transconductance | gFS | VDS = -10V, ID = -20A | 40 | S | ||
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg | VDD = -20V, ID = -20A, VGS = -10V | 44.1 | nC | ||
| Gate-Source Charge | Qgs | 8.6 | ||||
| Gate-Drain Charge | Qg d | 9.3 | ||||
| Input Capacitance | Ciss | VDS = -20V, VGS = 0V, f = 1.0MHz | 2088 | pF | ||
| Reverse Transfer Capacitance | Crss | 168 | ||||
| Output Capacitance | Coss | 290 | ||||
| Turn-On Delay Time | td(on) | VGS = -10V ,VDD = -20V, ID = -1A, RGEN=6.0 | 17.6 | ns | ||
| Turn-On Rise Time | tr | 17.8 | ||||
| Turn-Off Delay Time | td(off) | 59.0 | ||||
| Turn-Off Fall Time | tf | 19.8 | ||||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = -20A, VGS = 0V | - | -1.2 | V | |
| Reverse Recovery Time | trr | IS = -20A, di/dt=100A/us | 40 | ns | ||
| Reverse Recovery Charge | Qrr | 40 | nC | |||
2509121506_MagnaChip-Semicon-MDF3752TH_C51891816.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
