N Channel Power MOSFET ME50N06T Featuring High Cell Density and Maximum Current for Industrial Power
Key Attributes
Model Number:
ME50N06T
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
53A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
17mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
62pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.27nF@15V
Pd - Power Dissipation:
136W
Gate Charge(Qg):
-
Mfr. Part #:
ME50N06T
Package:
TO-220
Product Description
Product Overview
The ME50N06T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is suitable for power management, DC/DC converters, and load switch applications.
Product Attributes
- Brand: Matsuki Electric/ Force mos (implied by datasheet notes)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (ME50N06T), Green product-Halogen free (ME50N06T-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | VDSS | 60 | V | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current | ID | 53 | A | Tc=25°C |
| Continuous Drain Current | ID | 44 | A | TC=70°C |
| Pulsed Drain Current | IDM | 212 | A | |
| Maximum Power Dissipation | PD | 136 | W | TC=25°C |
| Maximum Power Dissipation | PD | 95 | W | TC=70°C |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | °C | |
| Thermal Resistance-Junction to Case* | RθJC | 1.1 | °C/W | * The device mounted on 1in² FR4 board with 2 oz copper. |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA |
| Gate Threshold Voltage | VGS(th) | 2.0 | V | VDS=VGS, ID=250μA |
| Gate Threshold Voltage | VGS(th) | 4.0 | V | VDS=VGS, ID=250μA |
| Gate-Body Leakage | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V |
| Drain-Source On-Resistance* | RDS(ON) | 17 | mΩ | VGS=10V, ID=50A |
| Drain-Source On-Resistance* | RDS(ON) | 22 | mΩ | VGS=10V, ID=50A |
| Diode Forward Voltage | VSD | 1.0 | V | IS=50A, VGS=0V |
| Diode Forward Voltage | VSD | 1.2 | V | IS=50A, VGS=0V |
| Total Gate Charge | Qg | 38 | nC | VDS=48V, VGS=10V, ID=50A |
| Total Gate Charge | Qg | 11 | nC | VDS=48V, VGS=4.5V, ID=50A |
| Gate-Source Charge | Qgs | 15 | nC | |
| Gate-Drain Charge | Qgd | 8 | nC | |
| Gate Resistance | Rg | 2 | Ω | VDS=0V, VGS=0V, f=1MHz |
| Input Capacitance | Ciss | 2270 | pF | VDS=15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 197 | pF | |
| Reverse Transfer Capacitance | Crss | 62 | pF | |
| Turn-On Delay Time | td(on) | 29 | ns | VDD=30V, RL=30Ω, VGS =10V, RG=3.6Ω |
| Turn-On Rise Time | tr | 5 | ns | |
| Turn-Off Delay Time | td(off) | 53 | ns | |
| Turn-Off Fall Time | Tf | 6 | ns |
2411220406_MATSUKI-ME50N06T_C709758.pdf
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