TO247 Package 650V Field Stop Trench IGBT MagnaChip Semicon MBQ75T65PEHTH Ideal for Motor Control and Welding Applications
Key Attributes
Model Number:
MBQ75T65PEHTH
Product Custom Attributes
Mfr. Part #:
MBQ75T65PEHTH
Package:
TO-247
Product Description
Product Overview
The MBQ75T65PEH is a 650V Field Stop Trench IGBT from Magnachip Semiconductor, designed with advanced technology for high performance, excellent quality, and superior ruggedness. It features a positive temperature coefficient for VCE(sat), a very soft and fast recovery anti-parallel diode, low EMI, and a maximum junction temperature of 175C. This IGBT is ideal for demanding applications such as PV inverters, UPS power systems, and welders, offering high ruggedness crucial for motor control applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Technology: Field Stop Trench IGBT
- Package: TO-247
- Certifications: RoHS Status: Halogen Free
- Date: November 2022
- Version: 1.4
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Collector-emitter voltage | VCE | 650 | V | |
| DC collector current, limited by Tvjmax | IC | 100 | A | TC=25C |
| DC collector current, limited by Tvjmax | IC | 75 | A | TC=100C |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 225 | A | |
| Diode forward current, limited by Tvjmax | IF | 80 | A | TC=25C |
| Diode forward current, limited by Tvjmax | IF | 50 | A | TC=100C |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 225 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Power dissipation | PD | 428 | W | TC=25C |
| Power dissipation | PD | 214 | W | TC=100C |
| Short circuit withstand time | tsc | 5 | s | VCC 360V, VGE = 15V, Tvj = 150C |
| Operating Junction temperature range | Tvj | -40~175 | C | |
| Storage temperature range | Tstg | -55~150 | C | |
| Thermal Characteristics | ||||
| Thermal resistance junction-to-ambient | Rth(j-a) | 40 | C/W | |
| Thermal resistance junction-to-case for IGBT | Rth(j-c) | 0.35 | ||
| Thermal resistance junction-to-case for Diode | Rth(j-c) | 0.70 | ||
| Ordering Information | ||||
| Part Number | Marking | Temp. Range | Package | Packing |
| MBQ75T65PEHTH | 75T65PEH | -55~175C | TO-247 | Tube |
| Electrical Characteristics (Tvj = 25C unless otherwise specified) | ||||
| Collector-emitter breakdown voltage | BVCES | 650 | V | IC = 2mA, VGE = 0V |
| Collector-emitter saturation voltage | VCE(sat) | 1.7 | V | IC = 75A, VGE= 15V, Tvj = 25C |
| Collector-emitter saturation voltage | VCE(sat) | 2.2 | V | IC = 75A, VGE= 15V, Tvj = 175C |
| Diode forward voltage | VF | 1.55 | V | VGE = 0V, IF = 50A, Tvj = 25C |
| Diode forward voltage | VF | 1.6 | V | VGE = 0V, IF = 50A, Tvj = 175C |
| Gate-emitter threshold voltage | VGE(th) | 4.5 - 6.5 | V | VCE = VGE, IC = 1.2mA |
| Zero gate voltage collector current | ICES | 20 | A | VCE = 650V, VGE = 0V, Tvj = 25C |
| Gate-emitter leakage current | IGES | 100 | nA | VGE = 20V, VCE = 0V |
| Dynamic Characteristics | ||||
| Total gate charge | QG | 280 | nC | VCE = 520V, IC = 75A, VGE = 15V |
| Gate-emitter charge | QGE | 42 | nC | |
| Gate-collector charge | QGC | 114 | nC | |
| Input capacitance | Cies | 6500 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 230 | pF | |
| Reverse transfer capacitance | Cres | 158 | pF | |
| Switching Characteristics | ||||
| Turn-on delay time | td(on) | 38 | ns | VGE = -5/15V, VCC = 400V, IC = 75A, RG = 10, Inductive Load, Tvj = 25C |
| Rise time | tr | 192 | ns | |
| Turn-off delay time | td(off) | 156 | ns | |
| Fall time | tf | 103 | ns | |
| Turn-on switching energy | Eon | 4.69 | mJ | |
| Turn-off switching energy | Eoff | 1.75 | mJ | |
| Total switching energy | Ets | 6.44 | mJ | |
| Turn-on delay time | td(on) | 37 | ns | VGE = -5/15V, VCC = 400V, IC = 75A, RG = 10, Inductive Load, Tvj = 175C |
| Rise time | tr | 194 | ns | |
| Turn-off delay time | td(off) | 168 | ns | |
| Fall time | tf | 106 | ns | |
| Turn-on switching energy | Eon | 5.62 | mJ | |
| Turn-off switching energy | Eoff | 2.04 | mJ | |
| Total switching energy | Ets | 7.66 | mJ | |
| Reverse recovery time | trr | 181 | ns | IF = 50A, diF/dt = 200A/ s, Tvj = 25C |
| Reverse recovery current | Irr | 10.4 | A | |
| Reverse recovery charge | Qrr | 1.12 | C | |
| Reverse recovery time | trr | 384 | ns | IF = 50A, diF/dt = 200A/ s, Tvj = 175C |
| Reverse recovery current | Irr | 13.3 | A | |
| Reverse recovery charge | Qrr | 3.07 | C | |
| Physical Dimension | ||||
| Dimension | Min(mm) | Max(mm) | ||
| A | 4.70 | 5.31 | ||
| A1 | 2.20 | 2.60 | ||
| A2 | 1.50 | 2.49 | ||
| b | 0.99 | 1.40 | ||
| b1 | 2.59 | 3.43 | ||
| b2 | 1.65 | 2.39 | ||
| c | 0.38 | 0.89 | ||
| D | 20.30 | 21.46 | ||
| D1 | 13.08 | - | ||
| E | 15.45 | 16.26 | ||
| E1 | 13.06 | 14.02 | ||
| E2 | 4.32 | 5.49 | ||
| e | 5.45BSC | |||
| L | 19.81 | 20.57 | ||
| L1 | - | 4.50 | ||
| P | 3.50 | 3.70 | ||
| Q | 5.38 | 6.20 | ||
| S | 6.15BSC | |||
2410121321_MagnaChip-Semicon-MBQ75T65PEHTH_C20611992.pdf
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