MASPOWER MS60N350DD1 N channel MOSFET for power factor correction and power management solutions
Key Attributes
Model Number:
MS60N350DD1
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
RDS(on):
45mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
487pF
Number:
1 N-channel
Output Capacitance(Coss):
1.016nF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
2.7nF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
MS60N350DD1
Package:
TO-252
Product Description
Product Overview
The MS60N350DD1 is a high-performance N-channel MOSFET from Maspower, designed for demanding power applications. It features a VDS of 60V and an ID of 30A, with a low RDS(ON) of 35m at VGS=10V. Its Super High Dense Cell Design ensures reliability and ruggedness, making it suitable for power factor correction (PFC), switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and power management systems.
Product Attributes
- Brand: Maspower
- Model: MS60N350DD1
- Version: H1.01
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDSS | ID=250A,VGS=0V | 60 | 65 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS,VGS=0V, Tc=25 | - | - | 1 | A |
| Tc=125 | - | - | 50 | |||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.8 | 1.3 | 2.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=12A | - | 35 | 45 | m |
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 2700 | - | pF |
| Output capacitance | Coss | - | 1016 | - | pF | |
| Reverse transfer capacitance | Crss | - | 487 | - | pF | |
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 25 | - | |
| Switching Characteristics | td(on) | VDS=28V,ID=16A, VGS=15V,RG=25 | - | 52 | - | ns |
| tr | - | 142 | - | |||
| td(Off) | - | 355 | - | |||
| tf | - | 230 | - | |||
| Total Gate Charge | Qg | VDS=48V,ID=16A, VGS=10V,RG=25 | - | 19 | - | nC |
| Gate-Source charge | Qgs | - | 6.3 | - | nC | |
| Gate-Drain charge | Qgd | - | 4.8 | - | nC | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=16A | - | 0.73 | 1.2 | V |
| Diode Forward Current | IS | - | - | 30 | A | |
| Reverse recovery time | Trr | ISD=15A, dISD/dt=100A/s | - | 100 | - | nS |
| Reverse recovery charge | Qrr | - | 0.33 | - | C | |
| Thermal Resistance,junction to Case | Rth(j-C) | 3 | /W | |||
| Thermal Resistance,junction to Ambient | Rth(j-A) | (6) | 100 | /W |
2408021403_MASPOWER-MS60N350DD1_C37635858.pdf
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